SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

OLIVO, Piero
 Distribuzione geografica
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Continente #
NA - Nord America 14.344
EU - Europa 5.100
AS - Asia 2.402
SA - Sud America 34
Continente sconosciuto - Info sul continente non disponibili 6
AF - Africa 4
OC - Oceania 2
Totale 21.892
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Nazione #
US - Stati Uniti d'America 14.156
PL - Polonia 1.998
CN - Cina 1.291
IT - Italia 824
UA - Ucraina 742
DE - Germania 522
SG - Singapore 487
GB - Regno Unito 449
TR - Turchia 444
FI - Finlandia 213
SE - Svezia 202
CA - Canada 187
ID - Indonesia 59
FR - Francia 38
KR - Corea 38
BE - Belgio 29
BR - Brasile 29
AT - Austria 27
VN - Vietnam 18
NL - Olanda 17
TW - Taiwan 16
JP - Giappone 9
IL - Israele 8
RU - Federazione Russa 8
HK - Hong Kong 7
CZ - Repubblica Ceca 6
EU - Europa 6
IN - India 6
IE - Irlanda 5
CH - Svizzera 4
ES - Italia 3
LT - Lituania 3
RO - Romania 3
AM - Armenia 2
AU - Australia 2
BD - Bangladesh 2
BO - Bolivia 2
IR - Iran 2
PK - Pakistan 2
PT - Portogallo 2
PY - Paraguay 2
UZ - Uzbekistan 2
AE - Emirati Arabi Uniti 1
AZ - Azerbaigian 1
BG - Bulgaria 1
EC - Ecuador 1
EG - Egitto 1
GR - Grecia 1
HU - Ungheria 1
IQ - Iraq 1
JO - Giordania 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MA - Marocco 1
ME - Montenegro 1
MY - Malesia 1
NO - Norvegia 1
PA - Panama 1
SA - Arabia Saudita 1
SC - Seychelles 1
TN - Tunisia 1
Totale 21.892
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Città #
Fairfield 2.174
Warsaw 1.995
Woodbridge 1.738
Houston 1.283
Ashburn 945
Seattle 887
Jacksonville 850
Ann Arbor 774
Wilmington 758
Santa Clara 744
Cambridge 735
Chandler 622
Singapore 357
Izmir 316
Ferrara 300
Nanjing 280
Beijing 211
Princeton 196
Addison 190
Milan 189
San Diego 180
Boardman 122
Mcallen 113
Montréal 108
Munich 88
Shanghai 84
Nanchang 81
Shenyang 79
Ottawa 73
Helsinki 63
Changsha 60
Dearborn 59
Jakarta 59
Los Angeles 58
Jiaxing 53
Hebei 50
Settimo Milanese 44
Tianjin 44
San Mateo 39
Redwood City 38
Falls Church 36
London 36
Jinan 32
Norwalk 32
Auburn Hills 27
Mountain View 26
Brussels 25
Hangzhou 24
Des Moines 23
Vienna 23
Frankfurt An Der Oder 21
Napoli 21
Ningbo 19
Zhengzhou 19
Guangzhou 18
Dong Ket 17
Kunming 17
Bologna 15
Orange 15
Verona 15
Chicago 12
Philadelphia 12
Indiana 11
Lanzhou 10
Phoenix 10
Falkenstein 9
Redmond 9
Xian 9
New York 8
Taipei 8
Changchun 7
Hounslow 7
Taizhou 7
Amsterdam 6
Hefei 6
Seoul 6
Washington 6
Bielefeld 5
Clifton 5
Frankfurt am Main 5
Gif-sur-yvette 5
Tappahannock 5
Tokyo 5
Toronto 5
Acton 4
Delft 4
Haikou 4
Kidron 4
Kilburn 4
Paris 4
Simi Valley 4
Taiyuan 4
Tel Aviv 4
Wuhan 4
Yellow Springs 4
Benevento 3
Dresden 3
Dublin 3
Fuzhou 3
Herent 3
Totale 17.737
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Nome #
Performance and reliability comparison of 1T-1R RRAM arrays with amorphous and polycrystalline HfO2 426
Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2 426
RRAM Reliability/Performance Characterization through Array Architectures Investigations 394
Implications of the Incremental Pulse and Verify Algorithm on the Forming and Switching Distributions in RERAM Arrays 328
Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices 327
Automated characterization of TAS-MRAM test arrays 318
Radiation hard design of HfO2 based 1T1R cells and memory arrays 311
Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms 306
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays 299
Reliability and Cell-to-Cell Variability of TAS-MRAM arrays under cycling conditions 298
Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance 295
Relationship among Current Fluctuations during Forming, Cell-To-Cell Variability and Reliability in RRAM Arrays 292
SSDExplorer: a Virtual Platform for Performance/Reliability-oriented Fine-Grained Design Space Exploration of Solid State Drives 191
Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays 181
Reliability challenges in 3D NAND Flash memories 174
Simulations of the software-defined flash 163
Solid-State Drives: Memory Driven Design Methodologies for Optimal Performance 158
LDPC Soft Decoding with Reduced Power and Latency in 1X-2X NAND Flash-Based Solid State Drives 150
Quality of Service implications of Enhanced Program Algorithms for Charge Trapping NAND in future Solid State Drives 148
System interconnect extensions for fully transparent demand paging in low-cost MMU-less embedded systems 145
Data retention investigation in Al:HfO 2 -based resistive random access memory arrays by using high-Temperature accelerated tests 135
null 133
Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO2-Based RRAM Arrays 131
Characterization of the Over-Erase Algorithm in FN/FN embedded NOR Flash arrays 131
Characterization of flash structures erased with ultra-short pulses 130
A cross-layer approach for new reliability-performance trade-offs in MLC NAND flash memories 130
Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays 130
Statistical Methodologies for Integrated Circuits Design 129
Performance and Reliability Analysis of Cross-Layer Optimizations of NAND Flash Controllers 129
Fundamental variability limits of filament-based RRAM 129
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 128
Overerase Phenomena: An Insight into Flash memory Reliability 128
Constant charge erasing scheme for Flash Memories 128
Characterization of TLC 3D-NAND Flash Endurance through Machine Learning for LDPC Code Rate Optimization 128
Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM 128
Quantum Effects in Accumulation Layers of Si-SiO2 Interfaces in the WKB Effective Mass Approximation 127
Bit error rate analysis in Charge Trapping memories for SSD applications 127
Hot Electrons in MOS Transistors: Lateral Distribution of the Trapped Oxide Charge 126
Electron trapping/detrapping within thin SiO2 films in the high field tunneling regime 125
Erratic bits in flash memories under Fowler-Nordheim programming 124
Is Consumer Electronics Redesigning Our Cars?: Challenges of Integrated Technologies for Sensing, Computing, and Storage 124
Correlated Fluctuations and Noise Spectra of Tunneling and Substrate Currents Before Breakdown in Thin-Oxide MOS Devices 124
Simulation of SSD’s power consumption 123
Characterization of the interface-driven 1st Reset operation in HfO2-based 1T1R RRAM devices 123
Electrical characterization of read window in reram arrays under different SET/RESET cycling conditions 122
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 122
A BIST Scheme for Non-Volatile Memories 121
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 120
Analysis of reliability/performance trade-off in Solid State Drives 120
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 119
Correlating Power Efficiency and Lifetime to Programming Strategies in RRAM-Based FPGAs 119
Quantum effects in accumulated MOS thin dielectric structures 118
SSDExplorer: A virtual platform for fine-grained design space exploration of Solid State Drives 118
A Probabilistic Fault Model for “Analog” Faults in Digital CMOS Circuits 118
Power-supply impact on the reliability of mid-1X TLC NAND flash memories 117
Cell-to-cell Fundamental Variability Limits Investigation in OxRRAM arrays 117
Reliability and performance characterization of a mems-based non-volatile switch 116
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 116
Reliability of 3D NAND Flash Memories 116
Low-Frequency Noise in Silicon-Gate Metal-Oxide-Silicon Capacitors Before Oxide Breakdown 114
Reliability of erasing operation in NOR-Flash memories 114
Architectural and Integration Options for 3D NAND Flash Memories 114
A new failure mode of very thin (< 50 A) Thermal SiO2 Films 114
Limits of sensing and storage electronic components for high-reliable and safety-critical automotive applications 114
Aliasing in Signature Analysis Testing with Multiple-Input Shift-Registers 113
Fault Simulation for General FCMOS ICs 113
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 113
Erratic Bits Classification for Efficient Repair Strategies in Automotive Embedded Flash Memories 113
Characterization of a MEMS-based embedded non volatile memory array for extreme environments 113
Two-Dimensional Effects in Hot-Electron Modified MOSFET's 112
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 112
SSDExplorer: A virtual platform for SSD simulations 112
LDPC Soft Decoding with Improved Performance in 1X-2X MLC and TLC NAND Flash-Based Solid State Drives 112
Testing of E2PROM Aging and Endurance: a Case Study 111
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 111
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 111
Modeling the Endurance Reliability of Intra-disk RAID Solutions for mid-1X TLC NAND Flash Solid State Drives 111
An Analytical Model for the Aliasing Probability in Signature Analysis Testing 110
Statistical analysis of resistive switching characteristics in ReRAM test arrays 110
Simulations of RRAM-based SSDs 110
Cross-Temperature Effects of Program and Read Operations in 2D and 3D NAND Flash Memories 110
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 109
High-Field-Induced Voltage-Dependent Oxide-Charge 109
Resistive RAM technology for SSDs 109
Advanced Electrical-Level Modeling of EEPROM Cells 108
Evidence of the Role of Defects Near the Injecting Interface in Determining SiO2 Breakdown 108
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 107
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 107
Testability Measures in Pseudorandom Testing 107
Analysis of Resistive Bridging Fault Detection in BiCMOS Digital ICs 106
Transient simulation of the erase cycle of floating gate EEPROMs 106
Erratic bits in Flash memories under Fowler-Nordheim programming 106
Dynamics of Fast-Erasing Bits in Flash Memories 106
Multilevel HfO2-based RRAM devices for low-power neuromorphic networks 106
Temperature Dependence of Fowler-Nordheim Injection from Accumulated n-type Silicon into Silicon Dioxide 106
Self-Consistent Solution of Poisson and Schrodinger Equations in Accumulated Semiconductor-Insulator Interfaces 105
Reliability Evaluation of Combinational Logic Circuits by Symbolic Simulation 105
A New Analytical Model of the Erasing Operation in Phase Change Memories 105
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 105
An automated test equipment for characterization of emerging MRAM and RRAM arrays 105
Totale 14.671
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Categoria #
all - tutte 94.855
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 7.538
Totale 102.393
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.404 0 0 0 0 0 0 534 503 477 506 215 169
2020/20213.545 317 322 224 366 168 458 201 388 103 539 279 180
2021/20222.125 106 146 157 44 169 126 126 107 116 166 199 663
2022/20231.755 207 17 82 183 230 289 174 167 213 10 139 44
2023/2024721 105 108 21 28 50 38 27 51 17 24 10 242
2024/20251.649 92 181 356 55 451 503 11 0 0 0 0 0
Totale 22.214