OLIVO, Piero
 Distribuzione geografica
Continente #
NA - Nord America 19.029
AS - Asia 8.945
EU - Europa 6.424
SA - Sud America 1.430
Continente sconosciuto - Info sul continente non disponibili 339
AF - Africa 217
OC - Oceania 6
AN - Antartide 1
Totale 36.391
Nazione #
US - Stati Uniti d'America 18.482
SG - Singapore 3.336
CN - Cina 2.387
PL - Polonia 2.060
BR - Brasile 1.146
IT - Italia 957
VN - Vietnam 878
HK - Hong Kong 843
UA - Ucraina 799
DE - Germania 692
GB - Regno Unito 630
TR - Turchia 508
CA - Canada 309
FR - Francia 271
FI - Finlandia 255
SE - Svezia 236
JP - Giappone 208
RU - Federazione Russa 205
MX - Messico 161
IN - India 147
BD - Bangladesh 122
ID - Indonesia 104
AR - Argentina 101
NL - Olanda 98
ZA - Sudafrica 89
ES - Italia 59
IQ - Iraq 55
KR - Corea 52
PK - Pakistan 44
CO - Colombia 42
EC - Ecuador 41
AT - Austria 38
VE - Venezuela 36
TW - Taiwan 35
MA - Marocco 31
BE - Belgio 29
UZ - Uzbekistan 26
MY - Malesia 23
PH - Filippine 22
PY - Paraguay 22
CL - Cile 20
SA - Arabia Saudita 19
TN - Tunisia 19
JO - Giordania 18
NP - Nepal 18
CR - Costa Rica 17
KE - Kenya 16
AE - Emirati Arabi Uniti 15
LT - Lituania 14
CZ - Repubblica Ceca 13
IL - Israele 13
EG - Egitto 12
AZ - Azerbaigian 11
DO - Repubblica Dominicana 11
DZ - Algeria 11
IE - Irlanda 11
BO - Bolivia 10
CH - Svizzera 10
SN - Senegal 10
GT - Guatemala 9
JM - Giamaica 9
KZ - Kazakistan 9
LB - Libano 9
PE - Perù 9
ET - Etiopia 8
AL - Albania 6
AU - Australia 6
EU - Europa 6
GR - Grecia 6
HN - Honduras 6
NI - Nicaragua 6
OM - Oman 6
AO - Angola 5
PA - Panama 5
PS - Palestinian Territory 5
SY - Repubblica araba siriana 5
TH - Thailandia 5
GD - Grenada 4
HU - Ungheria 4
KG - Kirghizistan 4
PT - Portogallo 4
RO - Romania 4
TT - Trinidad e Tobago 4
AM - Armenia 3
BA - Bosnia-Erzegovina 3
GE - Georgia 3
LV - Lettonia 3
MK - Macedonia 3
RS - Serbia 3
XK - ???statistics.table.value.countryCode.XK??? 3
BB - Barbados 2
BG - Bulgaria 2
CI - Costa d'Avorio 2
EE - Estonia 2
GH - Ghana 2
IR - Iran 2
KW - Kuwait 2
MU - Mauritius 2
NG - Nigeria 2
NO - Norvegia 2
Totale 36.032
Città #
Fairfield 2.175
Singapore 2.130
Warsaw 2.050
Ashburn 1.753
Woodbridge 1.738
Houston 1.303
San Jose 1.058
Seattle 900
Jacksonville 855
Santa Clara 838
Hong Kong 812
Ann Arbor 774
Wilmington 765
Cambridge 735
Beijing 721
Chandler 622
Izmir 319
Ho Chi Minh City 317
Ferrara 311
Nanjing 281
Hanoi 213
Milan 205
Los Angeles 201
Princeton 197
Tokyo 196
Addison 190
San Diego 180
Lauterbourg 174
Council Bluffs 160
Dallas 158
New York 146
The Dalles 138
Munich 135
Boardman 123
Mexico City 115
Mcallen 113
London 109
Montréal 108
São Paulo 106
Shanghai 99
Chicago 91
Helsinki 88
Nanchang 81
Shenyang 79
Ottawa 75
Orem 67
Jakarta 65
Changsha 63
Dearborn 60
Tianjin 58
Hefei 53
Jiaxing 53
Moscow 52
Hebei 50
Brooklyn 48
Amsterdam 45
Atlanta 45
Johannesburg 45
Settimo Milanese 44
Chennai 42
Da Nang 41
Montreal 39
Phoenix 39
Redwood City 39
San Mateo 39
Denver 37
Rio de Janeiro 37
Toronto 37
Falls Church 36
Hangzhou 36
San Francisco 36
Haiphong 34
Stockholm 34
Jinan 32
Norwalk 32
Manchester 31
Boston 30
Frankfurt am Main 30
Des Moines 29
Vienna 29
Columbus 28
Poplar 28
Auburn Hills 27
Bologna 27
Mountain View 26
Brussels 25
Falkenstein 25
Belo Horizonte 22
Brasília 22
Guangzhou 22
Tashkent 22
Frankfurt An Der Oder 21
Napoli 21
Baghdad 20
Dhaka 20
Zhengzhou 20
Ningbo 19
Nuremberg 19
The Hague 18
Washington 18
Totale 25.874
Nome #
Performance and reliability comparison of 1T-1R RRAM arrays with amorphous and polycrystalline HfO2 510
Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2 502
RRAM Reliability/Performance Characterization through Array Architectures Investigations 476
Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices 424
Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms 418
Automated characterization of TAS-MRAM test arrays 417
Implications of the Incremental Pulse and Verify Algorithm on the Forming and Switching Distributions in RERAM Arrays 413
Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance 405
Relationship among Current Fluctuations during Forming, Cell-To-Cell Variability and Reliability in RRAM Arrays 386
Reliability and Cell-to-Cell Variability of TAS-MRAM arrays under cycling conditions 372
Radiation hard design of HfO2 based 1T1R cells and memory arrays 369
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays 366
SSDExplorer: a Virtual Platform for Performance/Reliability-oriented Fine-Grained Design Space Exploration of Solid State Drives 328
Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays 314
Solid-State Drives: Memory Driven Design Methodologies for Optimal Performance 302
Simulations of the software-defined flash 257
Quality of Service implications of Enhanced Program Algorithms for Charge Trapping NAND in future Solid State Drives 255
Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM 253
System interconnect extensions for fully transparent demand paging in low-cost MMU-less embedded systems 245
LDPC Soft Decoding with Reduced Power and Latency in 1X-2X NAND Flash-Based Solid State Drives 241
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 238
Performance and Reliability Analysis of Cross-Layer Optimizations of NAND Flash Controllers 237
Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO2-Based RRAM Arrays 236
Architectural and Integration Options for 3D NAND Flash Memories 234
LDPC Soft Decoding with Improved Performance in 1X-2X MLC and TLC NAND Flash-Based Solid State Drives 233
A Probabilistic Fault Model for “Analog” Faults in Digital CMOS Circuits 231
A cross-layer approach for new reliability-performance trade-offs in MLC NAND flash memories 226
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 223
Reliability challenges in 3D NAND Flash memories 223
Constant charge erasing scheme for Flash Memories 221
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 218
Fundamental variability limits of filament-based RRAM 217
Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays 217
Analysis of reliability/performance trade-off in Solid State Drives 216
Data retention investigation in Al:HfO 2 -based resistive random access memory arrays by using high-Temperature accelerated tests 215
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 214
Simulation of SSD’s power consumption 214
An automated test equipment for characterization of emerging MRAM and RRAM arrays 214
A Compact Model for Erratic Event Simulation in Flash Memory Arrays 213
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 213
Overerase Phenomena: An Insight into Flash memory Reliability 210
Erratic bits in flash memories under Fowler-Nordheim programming 209
A BIST Scheme for Non-Volatile Memories 206
A new failure mode of very thin (< 50 A) Thermal SiO2 Films 204
Correlating Power Efficiency and Lifetime to Programming Strategies in RRAM-Based FPGAs 204
Aliasing in Signature Analysis Testing with Multiple-Input Shift-Registers 203
A New Analytical Model of the Erasing Operation in Phase Change Memories 203
Statistical Methodologies for Integrated Circuits Design 202
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 202
Advanced Electrical-Level Modeling of EEPROM Cells 201
An Analytical Model for the Aliasing Probability in Signature Analysis Testing 200
Analysis and Optimization of Erasing Waveform in Phase Change Memory Arrays 200
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 199
Electrical characterization of read window in reram arrays under different SET/RESET cycling conditions 198
Reliability of 3D NAND Flash Memories 198
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 197
Characterization of TLC 3D-NAND Flash Endurance through Machine Learning for LDPC Code Rate Optimization 197
Cross-Temperature Effects of Program and Read Operations in 2D and 3D NAND Flash Memories 197
An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories 193
Is Consumer Electronics Redesigning Our Cars?: Challenges of Integrated Technologies for Sensing, Computing, and Storage 193
Characterization of the Over-Erase Algorithm in FN/FN embedded NOR Flash arrays 193
Characterization of the interface-driven 1st Reset operation in HfO2-based 1T1R RRAM devices 192
Bit error rate analysis in Charge Trapping memories for SSD applications 191
Power-supply impact on the reliability of mid-1X TLC NAND flash memories 191
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 191
Impact of the NAND Flash Power Supply on Solid State Drives Reliability and Performance 190
Cell-to-cell Fundamental Variability Limits Investigation in OxRRAM arrays 189
Resistive RAM technology for SSDs 188
Erratic bits in Flash memories under Fowler-Nordheim programming 187
SSDExplorer: A virtual platform for fine-grained design space exploration of Solid State Drives 186
Analysis of Erratic Bits in FLASH Memories 184
Hot Electrons in MOS Transistors: Lateral Distribution of the Trapped Oxide Charge 184
A Novel Critical Path Heuristic for Fast Fault Grading 184
Characterization of flash structures erased with ultra-short pulses 183
Reliability and performance characterization of a mems-based non-volatile switch 182
Characterization of a MEMS-based embedded non volatile memory array for extreme environments 182
Automated Test Equipment for research on Non volatile memories 180
Simulations of RRAM-based SSDs 180
Electron trapping/detrapping within thin SiO2 films in the high field tunneling regime 179
Dynamics of Fast-Erasing Bits in Flash Memories 179
Limits of sensing and storage electronic components for high-reliable and safety-critical automotive applications 179
Quantum Effects in Accumulation Layers of Si-SiO2 Interfaces in the WKB Effective Mass Approximation 178
Erratic Bits Classification for Efficient Repair Strategies in Automotive Embedded Flash Memories 178
Correlated Fluctuations and Noise Spectra of Tunneling and Substrate Currents Before Breakdown in Thin-Oxide MOS Devices 178
SSDExplorer: A virtual platform for SSD simulations 177
Advanced spice-like modeling of E2PROM cells 175
Analysis of Erratic Bits in Flash Memories 175
Correlation between IDDQ Testing Quality and Sensor Accuracy 174
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 173
Affidabilità di sistemi wireless 172
Design trade-offs for NAND flash-based SSDs 172
Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices 172
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 171
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 170
Modeling the Endurance Reliability of Intra-disk RAID Solutions for mid-1X TLC NAND Flash Solid State Drives 170
Memory driven design methodologies for optimal SSD performance 170
Low-Frequency Noise in Silicon-Gate Metal-Oxide-Silicon Capacitors Before Oxide Breakdown 169
Testing of E2PROM Aging and Endurance: a Case Study 169
Reliability of erasing operation in NOR-Flash memories 169
Effect of field enhancement due to the coupling between a cellular phone and metallic eyeglasses 169
Totale 22.897
Categoria #
all - tutte 157.058
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 12.648
Totale 169.706


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.019 0 146 157 44 169 126 126 107 116 166 199 663
2022/20231.755 207 17 82 183 230 289 174 167 213 10 139 44
2023/2024721 105 108 21 28 50 38 27 51 17 24 10 242
2024/20254.159 92 181 356 55 451 503 181 316 487 574 653 310
2025/202611.225 924 546 989 1.471 1.773 692 1.315 566 1.106 1.273 368 202
2026/2027442 311 131 0 0 0 0 0 0 0 0 0 0
Totale 36.391