Performance and Reliability Analysis of Cross-Layer Optimizations of NAND Flash Controllers

NAND flash memories are becoming the predominant technology in the implementation of mass storage systems for both embedded and high-performance applications. However, when considering data and code storage in non-volatile memories (NVMs), such as NAND flash memories, reliability and performance become a serious concern for systems’ designer. Designing NAND flash based systems based on worst-case scenarios leads to waste of resources in terms of performance, power consumption, and storage capacity. This is clearly in contrast with the request for run-time reconfigurability, adaptivity, and resource optimization in nowadays computing systems. There is a clear trend toward supporting differentiated access modes in flash memory controllers, each one setting a differentiated trade-off point in the performance-reliability optimization space. This is supported by the possibility of tuning the NAND flash memory performance, reliability and power consumption acting on several tuning knobs such as the flash programming algorithm and the flash error correcting code. However, to successfully exploit these degrees of freedom, it is mandatory to clearly understand the effect the combined tuning of these parameters have on the full NVM sub-system. This paper performs a comprehensive quantitative analysis of the benefits provided by the run-time reconfigurability of an MLC NAND flash controller through the combined effect of an adaptable memory programming circuitry coupled with run-time adaptation of the ECC correction capability. The full nonvolatile memory (NVM) sub-system is taken into account, starting from the characterization of the low level circuitry to the effect of the adaptation on a wide set of realistic benchmarks in order to provide the readers a clear figure of the benefit this combined adaptation would provide at the system level.