In this paper we define a set of few electrical parameters aimed at giving a complete picture of the Phase Change Memory array behavior during writing/reading operations. A wide spectrum of information can be extracted, thus providing helpful indicators for process optimization. The degree of statistical dispersion, the shape of the distributions and the presence of anomalous cells can be easily extracted from fully automated testing measurements. ©2008 IEEE.

Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays

CHIMENTON, Andrea;ZAMBELLI, Cristian;OLIVO, Piero
2008

Abstract

In this paper we define a set of few electrical parameters aimed at giving a complete picture of the Phase Change Memory array behavior during writing/reading operations. A wide spectrum of information can be extracted, thus providing helpful indicators for process optimization. The degree of statistical dispersion, the shape of the distributions and the presence of anomalous cells can be easily extracted from fully automated testing measurements. ©2008 IEEE.
2008
9781424415465
Phase change memory; memory; non volatile memory; reliability; electron device
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/527669
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