In this paper it is presented a test equipment for the characterization of two different emerging memory technologies like the Thermally Assisted Switching-Magnetic Random Access Memory (TAS-MRAM) and the Resistive Random Access Memory (RRAM). The instrument is developed to allow a fast characterization of test array structures and can be potentially adapted for any other non-volatile memory generation. The hardware architecture is based on a PCI S5933 chipset being the local bus interface of a x86-PC that communicates with the units of the system like 14 bits/100 MHz arbitrary waveform generators and 12 bits/70 MHz programmable measurement units. A user-friendly software interface developed in LabVIEW has been implemented to allow large flexibility in changing the test parameters and a fast analysis of the test results. The instrument performance has been evaluated performing the typical non-volatile memory tests such as endurance and disturbs characterizations, running test flows up to 320 hours for MRAM devices and up to 6,137 hours for RRAM devices.

An automated test equipment for characterization of emerging MRAM and RRAM arrays

Grossi, Alessandro
Primo
;
Zambelli, Cristian
Secondo
;
Olivo, Piero;Pellati, Paolo;Ramponi, Michele;
2018

Abstract

In this paper it is presented a test equipment for the characterization of two different emerging memory technologies like the Thermally Assisted Switching-Magnetic Random Access Memory (TAS-MRAM) and the Resistive Random Access Memory (RRAM). The instrument is developed to allow a fast characterization of test array structures and can be potentially adapted for any other non-volatile memory generation. The hardware architecture is based on a PCI S5933 chipset being the local bus interface of a x86-PC that communicates with the units of the system like 14 bits/100 MHz arbitrary waveform generators and 12 bits/70 MHz programmable measurement units. A user-friendly software interface developed in LabVIEW has been implemented to allow large flexibility in changing the test parameters and a fast analysis of the test results. The instrument performance has been evaluated performing the typical non-volatile memory tests such as endurance and disturbs characterizations, running test flows up to 320 hours for MRAM devices and up to 6,137 hours for RRAM devices.
2018
Grossi, Alessandro; Zambelli, Cristian; Olivo, Piero; Pellati, Paolo; Ramponi, Michele; Wenger, Christian; Alvarez-Herault, Jeremy; Mackay, Ken
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2390750
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