GROSSI, Alessandro
 Distribuzione geografica
Continente #
EU - Europa 2.706
NA - Nord America 2.608
AS - Asia 324
Continente sconosciuto - Info sul continente non disponibili 5
SA - Sud America 2
AF - Africa 1
Totale 5.646
Nazione #
US - Stati Uniti d'America 2.480
PL - Polonia 1.909
IT - Italia 321
CN - Cina 175
GB - Regno Unito 159
DE - Germania 157
CA - Canada 127
UA - Ucraina 78
TR - Turchia 68
SG - Singapore 36
SE - Svezia 26
FI - Finlandia 22
VN - Vietnam 16
ID - Indonesia 14
FR - Francia 12
BE - Belgio 7
NL - Olanda 7
EU - Europa 5
KR - Corea 5
CH - Svizzera 3
JP - Giappone 3
HK - Hong Kong 2
TW - Taiwan 2
AT - Austria 1
BG - Bulgaria 1
BR - Brasile 1
CZ - Repubblica Ceca 1
EC - Ecuador 1
EG - Egitto 1
IL - Israele 1
IN - India 1
IQ - Iraq 1
PA - Panama 1
PT - Portogallo 1
RO - Romania 1
Totale 5.646
Città #
Warsaw 1.909
Fairfield 382
Woodbridge 297
Houston 217
Ashburn 178
Ann Arbor 166
Seattle 162
Wilmington 149
Cambridge 133
Ferrara 125
Jacksonville 115
Mcallen 111
Montréal 100
Chandler 81
Munich 67
Nanjing 49
Izmir 46
Beijing 41
Milan 39
Princeton 31
Addison 30
Dearborn 28
Ottawa 27
Shanghai 22
Boardman 21
Frankfurt An Der Oder 21
San Diego 21
Settimo Milanese 21
Singapore 20
Dong Ket 16
Jakarta 14
Falls Church 13
Norwalk 11
Changsha 10
Napoli 10
Phoenix 10
Tianjin 10
Des Moines 9
Nanchang 9
Redwood City 9
London 8
Shenyang 8
Auburn Hills 7
Hebei 7
Mountain View 7
Bielefeld 5
Gif-sur-yvette 5
Brussels 4
Cagliari 4
Delft 4
Herent 3
Jiaxing 3
Kunming 3
Bologna 2
Castel Bolognese 2
Castrocaro Terme 2
Den Haag 2
Dresden 2
Hong Kong 2
Hounslow 2
Indiana 2
Jinan 2
Köln 2
Los Angeles 2
Nereto 2
New York 2
Orange 2
Paris 2
Philadelphia 2
Redmond 2
Taipei 2
Tokyo 2
Verona 2
Walnut 2
Washington 2
Amsterdam 1
Andover 1
Baghdad 1
Berlin 1
Changchun 1
Chicago 1
Costa Mesa 1
Darmstadt 1
Edinburgh 1
Erlangen 1
Gallatin 1
Guayaquil 1
Hangzhou 1
Harbin 1
Hefei 1
Istanbul 1
Kolkata 1
Lausanne 1
Lisbon 1
Luoyang 1
Monza 1
Ningbo 1
Nokia 1
Orlando 1
Panama City 1
Totale 4.867
Nome #
Performance and reliability comparison of 1T-1R RRAM arrays with amorphous and polycrystalline HfO2 415
Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2 415
RRAM Reliability/Performance Characterization through Array Architectures Investigations 386
Implications of the Incremental Pulse and Verify Algorithm on the Forming and Switching Distributions in RERAM Arrays 315
Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices 309
Automated characterization of TAS-MRAM test arrays 305
Radiation hard design of HfO2 based 1T1R cells and memory arrays 303
Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms 297
Reliability and Cell-to-Cell Variability of TAS-MRAM arrays under cycling conditions 291
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays 289
Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance 285
Relationship among Current Fluctuations during Forming, Cell-To-Cell Variability and Reliability in RRAM Arrays 284
Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays 170
Quality of Service implications of Enhanced Program Algorithms for Charge Trapping NAND in future Solid State Drives 135
Fundamental variability limits of filament-based RRAM 120
Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO2-Based RRAM Arrays 119
Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays 118
Bit error rate analysis in Charge Trapping memories for SSD applications 117
Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM 116
Electrical characterization of read window in reram arrays under different SET/RESET cycling conditions 112
Resistive RAM endurance: Array-level characterization and correction techniques targeting deep learning applications 110
Reliability of 3D NAND Flash Memories 109
Cell-to-cell Fundamental Variability Limits Investigation in OxRRAM arrays 105
Statistical analysis of resistive switching characteristics in ReRAM test arrays 104
null 101
Reliability of CMOS Integrated Memristive HfO2 Arrays with Respect to Neuromorphic Computing 93
An automated test equipment for characterization of emerging MRAM and RRAM arrays 92
Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices 86
Temperature impact and programming algorithm for RRAM based memories 31
Memory System Architecture Optimization for Enterprise All-RRAM Solid State Drives 20
Emerging non volatile memories reliability 16
Totale 5.768
Categoria #
all - tutte 15.198
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 422
Totale 15.620


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.488 197 86 96 179 119 143 149 114 126 136 73 70
2020/20211.070 101 83 87 69 76 134 77 109 43 196 51 44
2021/2022308 30 11 13 5 20 28 8 20 21 43 23 86
2022/2023282 34 5 25 28 29 39 37 27 31 3 20 4
2023/2024131 14 17 4 3 6 14 5 11 4 2 2 49
2024/202514 14 0 0 0 0 0 0 0 0 0 0 0
Totale 5.768