SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

VADALA', Valeria
 Distribuzione geografica
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Continente #
NA - Nord America 5.036
EU - Europa 1.372
AS - Asia 772
SA - Sud America 6
AF - Africa 2
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 7.192
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Nazione #
US - Stati Uniti d'America 5.014
IT - Italia 481
CN - Cina 404
PL - Polonia 272
UA - Ucraina 214
TR - Turchia 194
SG - Singapore 146
DE - Germania 121
GB - Regno Unito 102
SE - Svezia 98
FI - Finlandia 51
CA - Canada 20
ID - Indonesia 13
LT - Lituania 7
BE - Belgio 6
BR - Brasile 4
FR - Francia 4
HK - Hong Kong 4
VN - Vietnam 4
BG - Bulgaria 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AT - Austria 2
AU - Australia 2
BD - Bangladesh 2
CZ - Repubblica Ceca 2
JP - Giappone 2
MA - Marocco 2
MD - Moldavia 2
MX - Messico 2
PT - Portogallo 2
AR - Argentina 1
CH - Svizzera 1
EC - Ecuador 1
ES - Italia 1
IE - Irlanda 1
IN - India 1
MY - Malesia 1
NL - Olanda 1
PK - Pakistan 1
SI - Slovenia 1
Totale 7.192
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Città #
Fairfield 793
Woodbridge 574
Houston 464
Ashburn 463
Ferrara 324
Ann Arbor 312
Jacksonville 279
Seattle 272
Warsaw 272
Cambridge 269
Wilmington 256
Chandler 217
Santa Clara 170
Singapore 96
Nanjing 91
Beijing 88
Izmir 88
Princeton 75
San Diego 51
Boardman 43
Dearborn 40
Shanghai 40
Addison 39
Nanchang 36
Los Angeles 33
Shenyang 24
Washington 22
Mountain View 20
London 19
Milan 18
Jiaxing 15
Redwood City 15
Norwalk 14
Toronto 14
Jakarta 13
Bologna 12
Hebei 12
Changsha 11
Kunming 11
Tianjin 11
Auburn Hills 9
Des Moines 9
Jinan 8
Settimo Milanese 8
Falls Church 7
Zhengzhou 7
Brussels 6
Ferrara di Monte Baldo 6
Guangzhou 6
Indiana 5
Ottawa 5
Cagliari 4
Frankfurt am Main 4
Lanzhou 4
Massapequa 4
Ningbo 4
Orange 4
Rome 4
Verona 4
Andover 3
Berlin 3
Cottbus 3
Dong Ket 3
Haikou 3
Hangzhou 3
Helsinki 3
Hong Kong 3
Torino 3
Changchun 2
Chengdu 2
Chicago 2
Chisinau 2
Clifton 2
Fuzhou 2
Garbagnate Milanese 2
Gavirate 2
Lucca 2
New York 2
Parma 2
Saint Paul 2
San Mateo 2
Taiyuan 2
Taizhou 2
Tappahannock 2
Vancouver 2
Vicenza 2
Vienna 2
Aachen 1
Acton 1
Amsterdam 1
Aveiro 1
Baotou 1
Bath 1
Bremen 1
Brentford 1
Buenos Aires 1
Cinisello Balsamo 1
Cittadella 1
Clearwater 1
Curitiba 1
Totale 5.802
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 287
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 184
CHARACTERIZATION AND MODELING OF LOW FREQUENCY DISPERSIVE EFFECTS IN III-V ELECTRON DEVICES 181
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 171
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 148
A procedure for the extraction of a nonlinear microwave GaN FET model 135
Extremely Low-Frequency Measurements Using an Active Bias Tee 132
NONLINEAR EMBEDDING AND DE-EMBEDDING TECHNIQUES FOR LARGE-SIGNAL FET MEASUREMENTS 130
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 129
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 128
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 127
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 127
Behavioral Modeling of GaN FETs: a Load-Line Approach 125
X-Band GaN Power Amplifier for Future Generation SAR Systems 122
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 122
GaN HEMT model extraction based on dynamic-bias measurements 120
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 119
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 119
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 119
A new approach to Class-E power amplifier design 117
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 117
Linear versus nonlinear de-embedding: Experimental investigation 115
Waveform engineering: State-of-the-art and future trends (invited paper) 115
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 114
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 114
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 112
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 111
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 111
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 110
null 110
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 110
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 109
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 109
Evaluation of FET performance and restrictions by low-frequency measurements 107
“Hybrid” Approach to Microwave Power Amplifier Design 106
Microwave FET model identification based on vector intermodulation measurements 106
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 104
Nonlinear model for 40-GHz cold-FET operation 104
75-VDC GaN technology investigation from a degradation perspective 104
GaN power amplifier design exploiting wideband large-signal matching 103
On the evaluation of the high-frequency load line in active devices 102
null 102
Thermal characterization of high-power GaN HEMTs up to 65 GHz 101
null 100
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 98
null 97
Extended operation of class-F power amplifiers using input waveform engineering 91
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 88
null 86
null 86
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 75
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 73
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 73
Current-gain in FETs beyond cut-off frequency 72
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 71
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 70
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 70
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 68
Class-A Power Amplifier Design Technique Based on Electron Device Low-Frequency Characterization 67
null 63
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 61
Power Amplifier Design Accounting for Input Large-Signal Matching 60
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 54
null 53
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 49
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 42
Scalability of Multifinger HEMT Performance 36
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 35
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 33
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 32
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 31
Empowering GaN HEMT models: The gateway for power amplifier design 26
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 26
A new description of fast charge-trapping effects in GaN FETs 26
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 23
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 23
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design 15
Nonlinear Embedding and De-embedding: Theory and Applications 14
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 13
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 10
Totale 7.348
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Categoria #
all - tutte 32.729
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 285
Totale 33.014
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.140 0 0 0 0 118 204 194 199 155 122 95 53
2020/20211.186 82 117 52 146 54 121 89 131 36 179 103 76
2021/2022801 42 67 54 13 41 53 45 53 38 72 104 219
2022/2023595 80 5 18 40 93 111 33 71 96 7 28 13
2023/2024444 32 70 36 21 45 85 17 17 11 8 14 88
2024/2025431 32 44 129 12 214 0 0 0 0 0 0 0
Totale 7.348