SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

VADALA', Valeria
 Distribuzione geografica
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Continente #
NA - Nord America 5.905
AS - Asia 2.305
EU - Europa 1.611
SA - Sud America 545
AF - Africa 45
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 10.415
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Nazione #
US - Stati Uniti d'America 5.800
SG - Singapore 915
CN - Cina 633
IT - Italia 510
BR - Brasile 460
PL - Polonia 292
HK - Hong Kong 274
UA - Ucraina 229
TR - Turchia 202
GB - Regno Unito 142
DE - Germania 137
VN - Vietnam 116
SE - Svezia 110
RU - Federazione Russa 66
FI - Finlandia 58
MX - Messico 48
CA - Canada 43
IN - India 32
AR - Argentina 30
BD - Bangladesh 26
ID - Indonesia 21
ZA - Sudafrica 18
JP - Giappone 17
IQ - Iraq 16
EC - Ecuador 15
FR - Francia 12
ES - Italia 10
LT - Lituania 10
VE - Venezuela 9
NL - Olanda 8
UZ - Uzbekistan 8
CO - Colombia 7
UY - Uruguay 7
AZ - Azerbaigian 6
BE - Belgio 6
CL - Cile 6
MA - Marocco 6
PK - Pakistan 6
TN - Tunisia 6
AT - Austria 5
EG - Egitto 5
JO - Giordania 5
OM - Oman 5
PY - Paraguay 5
CZ - Repubblica Ceca 4
DZ - Algeria 4
KE - Kenya 4
PE - Perù 4
SA - Arabia Saudita 4
AE - Emirati Arabi Uniti 3
BG - Bulgaria 3
CR - Costa Rica 3
JM - Giamaica 3
TW - Taiwan 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AU - Australia 2
BO - Bolivia 2
CH - Svizzera 2
HN - Honduras 2
KZ - Kazakistan 2
MD - Moldavia 2
MY - Malesia 2
PT - Portogallo 2
TT - Trinidad e Tobago 2
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BN - Brunei Darussalam 1
CI - Costa d'Avorio 1
CY - Cipro 1
ET - Etiopia 1
IE - Irlanda 1
IL - Israele 1
KG - Kirghizistan 1
LB - Libano 1
MN - Mongolia 1
NI - Nicaragua 1
PA - Panama 1
PH - Filippine 1
PS - Palestinian Territory 1
QA - Qatar 1
SI - Slovenia 1
SV - El Salvador 1
Totale 10.415
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Città #
Fairfield 793
Ashburn 586
Woodbridge 574
Singapore 486
Houston 465
Ferrara 327
Ann Arbor 312
Warsaw 292
Jacksonville 280
Seattle 275
Cambridge 269
Hong Kong 269
Wilmington 257
Chandler 217
Beijing 204
Santa Clara 184
Dallas 164
Nanjing 91
Izmir 88
Los Angeles 80
Princeton 75
San Diego 51
Ho Chi Minh City 46
Boardman 43
Shanghai 41
Dearborn 40
Addison 39
São Paulo 38
Mexico City 37
Nanchang 37
Chicago 33
London 31
Hanoi 27
New York 27
Shenyang 24
The Dalles 24
Washington 22
Columbus 20
Milan 20
Mountain View 20
Toronto 19
Moscow 18
Bologna 16
Jiaxing 15
Redwood City 15
San Francisco 15
Council Bluffs 14
Norwalk 14
Brooklyn 13
Jakarta 13
Changsha 12
Chennai 12
Hebei 12
Stockholm 12
Tianjin 12
Tokyo 12
Curitiba 11
Denver 11
Guangzhou 11
Johannesburg 11
Kunming 11
Belo Horizonte 10
Boston 10
Montreal 10
Rio de Janeiro 10
Atlanta 9
Auburn Hills 9
Des Moines 9
Jinan 8
Phoenix 8
Rome 8
Settimo Milanese 8
Zhengzhou 8
Brasília 7
Charlotte 7
Falls Church 7
Orem 7
Brussels 6
Dehradun 6
Ferrara di Monte Baldo 6
Haiphong 6
Hefei 6
Manchester 6
Ottawa 6
Quito 6
Turku 6
Uberlândia 6
Amman 5
Amsterdam 5
Baghdad 5
Baku 5
Buenos Aires 5
Indiana 5
Montevideo 5
Munich 5
Paris 5
Poplar 5
Salt Lake City 5
Salvador 5
Sorocaba 5
Totale 7.447
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 334
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 254
CHARACTERIZATION AND MODELING OF LOW FREQUENCY DISPERSIVE EFFECTS IN III-V ELECTRON DEVICES 233
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 225
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 200
A procedure for the extraction of a nonlinear microwave GaN FET model 185
Extremely low-frequency measurements using an active bias tee 184
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 177
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 176
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 174
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 174
A new approach to Class-E power amplifier design 172
Behavioral Modeling of GaN FETs: a Load-Line Approach 170
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 170
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 169
X-Band GaN Power Amplifier for Future Generation SAR Systems 169
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 168
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 167
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 165
Linear versus nonlinear de-embedding: Experimental investigation 165
Evaluation of FET performance and restrictions by low-frequency measurements 164
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 163
75-VDC GaN technology investigation from a degradation perspective 161
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 161
"Hybrid" Approach to microwave power amplifier design 160
On the evaluation of the high-frequency load line in active devices 160
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 160
GaN HEMT model extraction based on dynamic-bias measurements 159
Waveform engineering: State-of-the-art and future trends (invited paper) 157
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 156
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 155
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 154
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 153
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 152
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 150
Thermal characterization of high-power GaN HEMTs up to 65 GHz 150
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 150
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 147
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 145
GaN power amplifier design exploiting wideband large-signal matching 142
Microwave FET model identification based on vector intermodulation measurements 142
Nonlinear model for 40-GHz cold-FET operation 140
Extended operation of class-F power amplifiers using input waveform engineering 125
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 124
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 124
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 120
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 119
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 117
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 114
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 114
Power Amplifier Design Accounting for Input Large-Signal Matching 112
Class-A Power Amplifier Design Technique Based on Electron Device Low-Frequency Characterization 111
null 110
Current-gain in FETs beyond cut-off frequency 109
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 106
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 105
null 102
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null 97
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 94
A new description of fast charge-trapping effects in GaN FETs 92
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 90
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A Load–Pull Characterization Technique Accounting for Harmonic Tuning 81
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 80
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 79
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 73
Nonlinear Embedding and De-embedding: Theory and Applications 70
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 68
null 63
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 62
Scalability of Multifinger HEMT Performance 62
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 61
Empowering GaN HEMT models: The gateway for power amplifier design 60
null 53
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 53
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 49
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design 45
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 45
Totale 10.573
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Categoria #
all - tutte 49.538
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 504
Totale 50.042
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021735 0 0 0 0 0 121 89 131 36 179 103 76
2021/2022801 42 67 54 13 41 53 45 53 38 72 104 219
2022/2023595 80 5 18 40 93 111 33 71 96 7 28 13
2023/2024444 32 70 36 21 45 85 17 17 11 8 14 88
2024/20251.442 32 44 129 12 221 16 59 143 223 193 253 117
2025/20262.214 325 242 473 467 644 63 0 0 0 0 0 0
Totale 10.573