SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

VADALA', Valeria
 Distribuzione geografica
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Continente #
NA - Nord America 6.824
AS - Asia 3.079
EU - Europa 1.796
SA - Sud America 641
Continente sconosciuto - Info sul continente non disponibili 160
AF - Africa 69
OC - Oceania 2
Totale 12.571
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Nazione #
US - Stati Uniti d'America 6.677
SG - Singapore 1.127
CN - Cina 756
IT - Italia 555
BR - Brasile 505
HK - Hong Kong 305
PL - Polonia 298
VN - Vietnam 288
UA - Ucraina 231
TR - Turchia 211
GB - Regno Unito 161
DE - Germania 148
SE - Svezia 110
JP - Giappone 89
FR - Francia 84
IN - India 73
RU - Federazione Russa 70
FI - Finlandia 62
BD - Bangladesh 59
CA - Canada 58
MX - Messico 57
AR - Argentina 46
ID - Indonesia 29
IQ - Iraq 29
EC - Ecuador 25
ZA - Sudafrica 24
VE - Venezuela 19
CO - Colombia 17
ES - Italia 16
UZ - Uzbekistan 15
PK - Pakistan 14
MA - Marocco 13
NL - Olanda 12
SA - Arabia Saudita 11
TN - Tunisia 11
LT - Lituania 10
AE - Emirati Arabi Uniti 9
AZ - Azerbaigian 9
MY - Malesia 9
CL - Cile 8
JO - Giordania 8
UY - Uruguay 8
AT - Austria 7
CR - Costa Rica 7
EG - Egitto 7
JM - Giamaica 7
PH - Filippine 7
BE - Belgio 6
OM - Oman 6
DZ - Algeria 5
PE - Perù 5
PY - Paraguay 5
CZ - Repubblica Ceca 4
GT - Guatemala 4
HN - Honduras 4
IE - Irlanda 4
KE - Kenya 4
NP - Nepal 4
BG - Bulgaria 3
KZ - Kazakistan 3
PT - Portogallo 3
SV - El Salvador 3
TW - Taiwan 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AU - Australia 2
BA - Bosnia-Erzegovina 2
BO - Bolivia 2
CH - Svizzera 2
DK - Danimarca 2
IL - Israele 2
KR - Corea 2
MD - Moldavia 2
SI - Slovenia 2
TT - Trinidad e Tobago 2
BB - Barbados 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BS - Bahamas 1
CI - Costa d'Avorio 1
CY - Cipro 1
ET - Etiopia 1
GR - Grecia 1
KG - Kirghizistan 1
LB - Libano 1
LY - Libia 1
MM - Myanmar 1
MN - Mongolia 1
MZ - Mozambico 1
NG - Nigeria 1
NI - Nicaragua 1
PA - Panama 1
PR - Porto Rico 1
PS - Palestinian Territory 1
QA - Qatar 1
RS - Serbia 1
SR - Suriname 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
Totale 12.413
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Città #
Fairfield 793
Ashburn 781
Singapore 649
Woodbridge 574
Houston 467
San Jose 346
Ferrara 327
Ann Arbor 312
Warsaw 299
Hong Kong 294
Jacksonville 280
Seattle 276
Cambridge 269
Wilmington 257
Beijing 224
Chandler 217
Santa Clara 211
Dallas 177
Los Angeles 99
Ho Chi Minh City 97
Nanjing 92
Izmir 88
Tokyo 83
Hanoi 80
Princeton 75
Lauterbourg 60
San Diego 53
Council Bluffs 47
New York 46
Boardman 43
São Paulo 42
Mexico City 41
Shanghai 41
Dearborn 40
Addison 39
Chicago 39
Nanchang 37
London 34
The Dalles 30
Milan 28
Toronto 27
Washington 25
Shenyang 24
Columbus 22
Orem 21
San Francisco 21
Mountain View 20
Moscow 18
Bologna 17
Brooklyn 15
Changsha 15
Guangzhou 15
Jiaxing 15
Johannesburg 15
Norwalk 15
Redwood City 15
Chennai 14
Da Nang 14
Denver 14
Haiphong 14
Rome 14
Baghdad 13
Jakarta 13
Atlanta 12
Curitiba 12
Hebei 12
Manchester 12
Stockholm 12
Tianjin 12
Belo Horizonte 11
Buffalo 11
Kunming 11
Montreal 11
Rio de Janeiro 11
Boston 10
Charlotte 10
Des Moines 10
Guayaquil 10
Phoenix 10
Tashkent 10
Auburn Hills 9
Frankfurt am Main 9
Quito 9
Zhengzhou 9
Amman 8
Dehradun 8
Jinan 8
Poplar 8
Settimo Milanese 8
Baku 7
Brasília 7
Falls Church 7
Helsinki 7
Istanbul 7
Mumbai 7
Paris 7
Salvador 7
Uberlândia 7
Amsterdam 6
Brussels 6
Totale 8.721
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 370
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 299
CHARACTERIZATION AND MODELING OF LOW FREQUENCY DISPERSIVE EFFECTS IN III-V ELECTRON DEVICES 287
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 280
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 233
A new approach to Class-E power amplifier design 226
A procedure for the extraction of a nonlinear microwave GaN FET model 222
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 212
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 211
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 211
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 208
75-VDC GaN technology investigation from a degradation perspective 206
Extremely low-frequency measurements using an active bias tee 203
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 201
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 198
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 197
X-Band GaN Power Amplifier for Future Generation SAR Systems 197
Behavioral Modeling of GaN FETs: a Load-Line Approach 195
Linear versus nonlinear de-embedding: Experimental investigation 194
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 192
Waveform engineering: State-of-the-art and future trends (invited paper) 192
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 190
Evaluation of FET performance and restrictions by low-frequency measurements 190
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 190
On the evaluation of the high-frequency load line in active devices 189
"Hybrid" Approach to microwave power amplifier design 186
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 186
Thermal characterization of high-power GaN HEMTs up to 65 GHz 185
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 185
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 181
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 180
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 179
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 178
GaN HEMT model extraction based on dynamic-bias measurements 178
Microwave FET model identification based on vector intermodulation measurements 177
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 175
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 174
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 174
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 168
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 167
Nonlinear model for 40-GHz cold-FET operation 163
GaN power amplifier design exploiting wideband large-signal matching 162
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 153
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 152
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 147
Extended operation of class-F power amplifiers using input waveform engineering 147
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 146
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 141
Power Amplifier Design Accounting for Input Large-Signal Matching 137
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 134
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 131
Class-A Power Amplifier Design Technique Based on Electron Device Low-Frequency Characterization 131
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 129
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 125
Current-gain in FETs beyond cut-off frequency 125
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 122
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 122
A new description of fast charge-trapping effects in GaN FETs 121
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 113
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 113
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 111
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Nonlinear Embedding and De-embedding: Theory and Applications 101
null 100
null 97
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 97
Empowering GaN HEMT models: The gateway for power amplifier design 89
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 89
null 86
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Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 86
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 82
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 77
Scalability of Multifinger HEMT Performance 74
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 65
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design 64
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Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 59
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Totale 12.571
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Categoria #
all - tutte 58.219
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 615
Totale 58.834
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022759 0 67 54 13 41 53 45 53 38 72 104 219
2022/2023595 80 5 18 40 93 111 33 71 96 7 28 13
2023/2024444 32 70 36 21 45 85 17 17 11 8 14 88
2024/20251.442 32 44 129 12 221 16 59 143 223 193 253 117
2025/20263.997 325 242 473 467 644 232 392 179 403 459 122 59
2026/2027215 107 108 0 0 0 0 0 0 0 0 0 0
Totale 12.571