SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

VADALA', Valeria
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 6.460
AS - Asia 3.001
EU - Europa 1.758
SA - Sud America 626
AF - Africa 69
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 11.918
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 6.344
SG - Singapore 1.096
CN - Cina 729
IT - Italia 523
BR - Brasile 502
HK - Hong Kong 302
PL - Polonia 298
VN - Vietnam 286
UA - Ucraina 231
TR - Turchia 211
GB - Regno Unito 161
DE - Germania 148
SE - Svezia 110
JP - Giappone 88
FR - Francia 82
IN - India 73
RU - Federazione Russa 70
FI - Finlandia 62
MX - Messico 52
BD - Bangladesh 48
CA - Canada 47
AR - Argentina 44
ID - Indonesia 29
IQ - Iraq 29
ZA - Sudafrica 24
EC - Ecuador 23
VE - Venezuela 18
ES - Italia 15
UZ - Uzbekistan 15
PK - Pakistan 14
MA - Marocco 13
NL - Olanda 12
CO - Colombia 11
SA - Arabia Saudita 11
TN - Tunisia 11
LT - Lituania 10
AE - Emirati Arabi Uniti 9
AZ - Azerbaigian 9
CL - Cile 8
JO - Giordania 8
AT - Austria 7
EG - Egitto 7
MY - Malesia 7
PH - Filippine 7
UY - Uruguay 7
BE - Belgio 6
OM - Oman 6
DZ - Algeria 5
PE - Perù 5
PY - Paraguay 5
CZ - Repubblica Ceca 4
IE - Irlanda 4
JM - Giamaica 4
KE - Kenya 4
NP - Nepal 4
BG - Bulgaria 3
CR - Costa Rica 3
KZ - Kazakistan 3
TW - Taiwan 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AU - Australia 2
BO - Bolivia 2
CH - Svizzera 2
DK - Danimarca 2
GT - Guatemala 2
HN - Honduras 2
IL - Israele 2
KR - Corea 2
MD - Moldavia 2
PT - Portogallo 2
SI - Slovenia 2
TT - Trinidad e Tobago 2
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BH - Bahrain 1
BN - Brunei Darussalam 1
CI - Costa d'Avorio 1
CY - Cipro 1
ET - Etiopia 1
KG - Kirghizistan 1
LB - Libano 1
LY - Libia 1
MN - Mongolia 1
MZ - Mozambico 1
NG - Nigeria 1
NI - Nicaragua 1
PA - Panama 1
PS - Palestinian Territory 1
QA - Qatar 1
RS - Serbia 1
SR - Suriname 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
Totale 11.918
Salva come PNG Salva come JPEG
Città #
Fairfield 793
Ashburn 751
Singapore 637
Woodbridge 574
Houston 465
Ferrara 327
Ann Arbor 312
Warsaw 298
Hong Kong 291
Jacksonville 280
Seattle 276
Cambridge 269
Wilmington 257
San Jose 245
Chandler 217
Beijing 215
Santa Clara 192
Dallas 167
Ho Chi Minh City 97
Los Angeles 92
Nanjing 92
Izmir 88
Tokyo 83
Hanoi 80
Princeton 75
Lauterbourg 60
San Diego 51
Boardman 43
São Paulo 42
Shanghai 41
Dearborn 40
Addison 39
Mexico City 37
Nanchang 37
New York 36
London 34
Chicago 33
The Dalles 30
Council Bluffs 29
Shenyang 24
Washington 24
Milan 21
Columbus 20
Mountain View 20
Toronto 20
Orem 19
Moscow 18
San Francisco 18
Bologna 16
Guangzhou 15
Jiaxing 15
Johannesburg 15
Redwood City 15
Changsha 14
Chennai 14
Norwalk 14
Baghdad 13
Brooklyn 13
Da Nang 13
Denver 13
Haiphong 13
Jakarta 13
Atlanta 12
Curitiba 12
Hebei 12
Manchester 12
Stockholm 12
Tianjin 12
Belo Horizonte 11
Kunming 11
Montreal 11
Rio de Janeiro 11
Boston 10
Tashkent 10
Auburn Hills 9
Charlotte 9
Des Moines 9
Frankfurt am Main 9
Phoenix 9
Quito 9
Rome 9
Zhengzhou 9
Amman 8
Dehradun 8
Guayaquil 8
Jinan 8
Poplar 8
Settimo Milanese 8
Baku 7
Brasília 7
Buffalo 7
Falls Church 7
Helsinki 7
Istanbul 7
Mumbai 7
Paris 7
Salvador 7
Amsterdam 6
Brussels 6
Buenos Aires 6
Totale 8.442
Salva come PNG Salva come JPEG
Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 355
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 294
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 269
CHARACTERIZATION AND MODELING OF LOW FREQUENCY DISPERSIVE EFFECTS IN III-V ELECTRON DEVICES 267
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 226
A procedure for the extraction of a nonlinear microwave GaN FET model 211
A new approach to Class-E power amplifier design 209
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 204
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 203
Extremely low-frequency measurements using an active bias tee 199
75-VDC GaN technology investigation from a degradation perspective 199
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 198
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 197
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 197
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 194
Linear versus nonlinear de-embedding: Experimental investigation 189
X-Band GaN Power Amplifier for Future Generation SAR Systems 189
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 187
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 186
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 185
Behavioral Modeling of GaN FETs: a Load-Line Approach 185
Waveform engineering: State-of-the-art and future trends (invited paper) 184
On the evaluation of the high-frequency load line in active devices 183
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 183
"Hybrid" Approach to microwave power amplifier design 182
Evaluation of FET performance and restrictions by low-frequency measurements 181
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 181
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 179
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 177
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 176
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 175
GaN HEMT model extraction based on dynamic-bias measurements 174
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 173
Thermal characterization of high-power GaN HEMTs up to 65 GHz 171
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 171
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 169
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 166
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 166
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 161
Microwave FET model identification based on vector intermodulation measurements 160
Nonlinear model for 40-GHz cold-FET operation 157
GaN power amplifier design exploiting wideband large-signal matching 156
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 145
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 144
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 144
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 141
Extended operation of class-F power amplifiers using input waveform engineering 141
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 136
Power Amplifier Design Accounting for Input Large-Signal Matching 133
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 130
Class-A Power Amplifier Design Technique Based on Electron Device Low-Frequency Characterization 129
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 128
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 123
Current-gain in FETs beyond cut-off frequency 121
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 118
A new description of fast charge-trapping effects in GaN FETs 117
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 116
null 110
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation 107
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 106
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 105
null 102
null 100
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 100
null 97
Nonlinear Embedding and De-embedding: Theory and Applications 96
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C 92
null 86
null 86
Empowering GaN HEMT models: The gateway for power amplifier design 84
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs 82
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 80
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 73
Scalability of Multifinger HEMT Performance 72
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 72
null 63
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design 60
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation 60
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 56
null 53
Totale 12.076
Salva come PNG Salva come JPEG
Categoria #
all - tutte 52.700
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 548
Totale 53.248
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021358 0 0 0 0 0 0 0 0 0 179 103 76
2021/2022801 42 67 54 13 41 53 45 53 38 72 104 219
2022/2023595 80 5 18 40 93 111 33 71 96 7 28 13
2023/2024444 32 70 36 21 45 85 17 17 11 8 14 88
2024/20251.442 32 44 129 12 221 16 59 143 223 193 253 117
2025/20263.717 325 242 473 467 644 232 392 179 403 360 0 0
Totale 12.076