We present a measurement technique for the characterization of the degradation in microwave transistors. The time-domain setup operates in the megahertz range to set a realistic load-line for the device. Data on the degradation of a microwave transistor are reported.
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements
Bosi G.Primo
;Vadala' V.Secondo
;Raffo A.
Penultimo
;Vannini G.Ultimo
2021
Abstract
We present a measurement technique for the characterization of the degradation in microwave transistors. The time-domain setup operates in the megahertz range to set a realistic load-line for the device. Data on the degradation of a microwave transistor are reported.File in questo prodotto:
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