In this manuscript reliability issues in GaAs pHEMTs are empirically investigated. Starting from typical reliability approaches where the average value of the gate current is dealt with, we show that an exhaustive information for reliability analysis can be obtained only by looking at the gate current dynamic behaviour. Different experimental examples are provided in order to demonstrate the validity of the proposed considerations.

Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues

VADALA', Valeria;BOSI, Gianni;RAFFO, Antonio;VANNINI, Giorgio
2012

Abstract

In this manuscript reliability issues in GaAs pHEMTs are empirically investigated. Starting from typical reliability approaches where the average value of the gate current is dealt with, we show that an exhaustive information for reliability analysis can be obtained only by looking at the gate current dynamic behaviour. Different experimental examples are provided in order to demonstrate the validity of the proposed considerations.
2012
9782874870286
GaAs HEMTs; non-linear modeling; reliability; semiconductor device measurements; time-domain measurements;
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1761507
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