The extraction of an accurate model for GaN HEMT devices is of fundamental importance for high-power amplifier design. In particular, the model should be able to reproduce the microwave device behaviour under realistic operating conditions. In light of that, we present a technique for extracting a large-signal GaN HEMT equivalent circuit, which includes both low-frequency dispersive phenomena and high-frequency non-quasi-static effects. © 2011 IEEE.
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects
RAFFO, Antonio;VADALA', Valeria;DI FALCO, Sergio;VANNINI, Giorgio
2011
Abstract
The extraction of an accurate model for GaN HEMT devices is of fundamental importance for high-power amplifier design. In particular, the model should be able to reproduce the microwave device behaviour under realistic operating conditions. In light of that, we present a technique for extracting a large-signal GaN HEMT equivalent circuit, which includes both low-frequency dispersive phenomena and high-frequency non-quasi-static effects. © 2011 IEEE.File in questo prodotto:
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