CHIMENTON, Andrea
 Distribuzione geografica
Continente #
NA - Nord America 4.924
AS - Asia 2.202
EU - Europa 967
SA - Sud America 367
AF - Africa 54
Continente sconosciuto - Info sul continente non disponibili 30
AN - Antartide 1
Totale 8.545
Nazione #
US - Stati Uniti d'America 4.803
SG - Singapore 814
CN - Cina 639
BR - Brasile 295
UA - Ucraina 241
VN - Vietnam 227
HK - Hong Kong 184
GB - Regno Unito 149
DE - Germania 145
TR - Turchia 129
IT - Italia 110
FR - Francia 71
FI - Finlandia 64
MX - Messico 56
JP - Giappone 55
RU - Federazione Russa 52
SE - Svezia 52
CA - Canada 47
IN - India 41
AR - Argentina 25
BD - Bangladesh 25
ZA - Sudafrica 24
PL - Polonia 19
ES - Italia 16
NL - Olanda 15
ID - Indonesia 14
IQ - Iraq 14
EC - Ecuador 13
BE - Belgio 10
CO - Colombia 9
KE - Kenya 9
PK - Pakistan 9
PY - Paraguay 8
VE - Venezuela 8
KR - Corea 6
NP - Nepal 6
DO - Repubblica Dominicana 5
EG - Egitto 5
LT - Lituania 5
MA - Marocco 5
AE - Emirati Arabi Uniti 4
CR - Costa Rica 4
JO - Giordania 4
TN - Tunisia 4
BO - Bolivia 3
CL - Cile 3
CZ - Repubblica Ceca 3
GR - Grecia 3
KZ - Kazakistan 3
MY - Malesia 3
SA - Arabia Saudita 3
UZ - Uzbekistan 3
AL - Albania 2
CH - Svizzera 2
DZ - Algeria 2
ET - Etiopia 2
GT - Guatemala 2
HU - Ungheria 2
IL - Israele 2
OM - Oman 2
PE - Perù 2
SN - Senegal 2
SY - Repubblica araba siriana 2
TW - Taiwan 2
AM - Armenia 1
AQ - Antartide 1
AZ - Azerbaigian 1
BH - Bahrain 1
CY - Cipro 1
EE - Estonia 1
EU - Europa 1
GD - Grenada 1
GY - Guiana 1
HN - Honduras 1
HR - Croazia 1
JM - Giamaica 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
KY - Cayman, isole 1
LB - Libano 1
LK - Sri Lanka 1
LY - Libia 1
MK - Macedonia 1
NI - Nicaragua 1
PA - Panama 1
PH - Filippine 1
PT - Portogallo 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
Totale 8.516
Città #
Fairfield 573
Singapore 546
Woodbridge 492
Ashburn 390
Houston 315
San Jose 296
Jacksonville 251
Santa Clara 229
Seattle 220
Beijing 203
Ann Arbor 201
Cambridge 195
Wilmington 194
Hong Kong 178
Chandler 146
Council Bluffs 100
Ho Chi Minh City 84
Nanjing 82
Izmir 77
Los Angeles 60
Tokyo 55
Hanoi 52
Princeton 50
San Diego 48
Addison 47
Dallas 46
Boardman 45
New York 43
Lauterbourg 41
Mexico City 36
Milan 36
Ferrara 31
São Paulo 31
Nanchang 29
Shanghai 27
Shenyang 27
Chicago 26
Orem 25
The Dalles 21
Brooklyn 20
London 20
Jiaxing 18
Moscow 18
Ottawa 18
Warsaw 17
Hefei 16
Munich 16
Boston 15
San Francisco 15
Changsha 14
Chennai 13
Haiphong 13
Helsinki 13
Tianjin 13
Auburn Hills 12
Denver 12
Johannesburg 12
Poplar 12
Amsterdam 11
Manchester 11
Rio de Janeiro 11
Stockholm 11
Brussels 10
Falkenstein 9
Hebei 9
Montreal 9
Nairobi 9
Settimo Milanese 9
Atlanta 8
Brasília 8
Mountain View 8
Ningbo 8
Xian 8
Bologna 7
Curitiba 7
Dearborn 7
Phoenix 7
Redwood City 7
Rome 7
San Mateo 7
Baghdad 6
Belo Horizonte 6
Da Nang 6
Falls Church 6
Frankfurt am Main 6
Verona 6
Indiana 5
Kunming 5
Norwalk 5
Toronto 5
Amman 4
Ankara 4
Campinas 4
Ciudad del Este 4
Fortaleza 4
Guangzhou 4
Istanbul 4
Jinan 4
Kansas City 4
Lahore 4
Totale 6.119
Nome #
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 243
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 226
Constant charge erasing scheme for Flash Memories 224
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 223
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 216
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 215
Erratic bits in flash memories under Fowler-Nordheim programming 214
Overerase Phenomena: An Insight into Flash memory Reliability 213
A New Analytical Model of the Erasing Operation in Phase Change Memories 208
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 205
Statistical Methodologies for Integrated Circuits Design 203
Analysis and Optimization of Erasing Waveform in Phase Change Memory Arrays 203
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 203
Monte-Carlo Simulations of Flash Memory Array Retention 202
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 199
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 193
Electrical Characterization and Modeling of Phase Change Memory arrays 192
Erratic bits in Flash memories under Fowler-Nordheim programming 191
Analysis of Erratic Bits in FLASH Memories 186
Reliability and performance characterization of a mems-based non-volatile switch 183
Dynamics of Fast-Erasing Bits in Flash Memories 182
Analysis of Erratic Bits in Flash Memories 177
Affidabilità di sistemi wireless 175
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 175
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 175
Reliability of erasing operation in NOR-Flash memories 172
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 171
Reliability of Floating Gate Memories 169
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 169
Evidence of erratic behaviors in p-channel floating gate memories and cell architectural solution 169
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 166
Drain-accelerated degradation of tunnel oxides in Flash memories 165
Erratic Erase in Flash Memories (part I): Basic Experimental and Statistical Characterization 160
Modeling of SET Seasoning Effects in Phase Change Memory Arrays 159
Statistical Modeling of Secondary Path during Erase Operation in Phase Change Memories 159
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories 157
Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories 154
Impact of High Tunneling Electric Fields on Erasing Instabilities in NOR-Flash Memories 151
Reliability in Wireless Systems 150
Flash Memory Reliability: an Improvement Against Erratic Erase Phenomena Using the Constant Charge Erasing Scheme 149
Experimental characterization of SET Seasoning on Phase Change Memory arrays 140
Flash Memory Reliability: an improvement against Erratic Erase phenomena using the Constant Charge Erasing Scheme 139
Generation rate of Erratic bits in Flash Memories 135
Ultra-short pulses improving performance and reliability in flash memories 132
Reliability of Flash Memory Erasing Operation under High Tunneling Electric Fields 131
Reliability of NAND Flash Memories 131
Erratic erase in flash memories - Part II: Dependence on operating conditions 128
Pulsed Tunnel Operating Non Volatile Flash Memories with SILC Reduction 89
Anomalous charge loss from Floating-Gate Memory Cells due to heavy ions irradiation 74
Totale 8.545
Categoria #
all - tutte 37.522
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.579
Totale 40.101


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022558 0 81 66 11 13 23 33 27 15 36 72 181
2022/2023423 51 2 13 47 62 78 27 36 63 2 29 13
2023/2024185 36 23 6 9 6 5 6 20 7 13 0 54
2024/2025966 29 53 76 4 108 126 57 67 85 114 169 78
2025/20262.865 254 173 249 431 507 166 302 134 248 290 87 24
2026/2027214 75 139 0 0 0 0 0 0 0 0 0 0
Totale 8.545