CHIMENTON, Andrea
 Distribuzione geografica
Continente #
NA - Nord America 4.612
AS - Asia 2.166
EU - Europa 944
SA - Sud America 363
AF - Africa 54
AN - Antartide 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 8.141
Nazione #
US - Stati Uniti d'America 4.502
SG - Singapore 803
CN - Cina 626
BR - Brasile 293
UA - Ucraina 241
VN - Vietnam 227
HK - Hong Kong 178
GB - Regno Unito 149
DE - Germania 145
TR - Turchia 129
IT - Italia 100
FR - Francia 69
FI - Finlandia 64
JP - Giappone 55
MX - Messico 54
RU - Federazione Russa 52
SE - Svezia 45
IN - India 41
CA - Canada 40
AR - Argentina 25
ZA - Sudafrica 24
BD - Bangladesh 22
PL - Polonia 18
ES - Italia 15
NL - Olanda 15
IQ - Iraq 14
EC - Ecuador 13
ID - Indonesia 13
BE - Belgio 10
KE - Kenya 9
PK - Pakistan 9
PY - Paraguay 8
VE - Venezuela 8
CO - Colombia 7
DO - Repubblica Dominicana 5
EG - Egitto 5
KR - Corea 5
MA - Marocco 5
NP - Nepal 5
AE - Emirati Arabi Uniti 4
JO - Giordania 4
LT - Lituania 4
TN - Tunisia 4
BO - Bolivia 3
CL - Cile 3
CR - Costa Rica 3
CZ - Repubblica Ceca 3
GR - Grecia 3
KZ - Kazakistan 3
MY - Malesia 3
SA - Arabia Saudita 3
UZ - Uzbekistan 3
CH - Svizzera 2
DZ - Algeria 2
ET - Etiopia 2
GT - Guatemala 2
HU - Ungheria 2
IL - Israele 2
OM - Oman 2
PE - Perù 2
SN - Senegal 2
SY - Repubblica araba siriana 2
TW - Taiwan 2
AL - Albania 1
AM - Armenia 1
AQ - Antartide 1
AZ - Azerbaigian 1
BH - Bahrain 1
CY - Cipro 1
EE - Estonia 1
EU - Europa 1
GD - Grenada 1
GY - Guiana 1
HN - Honduras 1
HR - Croazia 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
KY - Cayman, isole 1
LB - Libano 1
LK - Sri Lanka 1
LY - Libia 1
MK - Macedonia 1
NI - Nicaragua 1
PA - Panama 1
PH - Filippine 1
PT - Portogallo 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
Totale 8.141
Città #
Fairfield 573
Singapore 543
Woodbridge 492
Ashburn 375
Houston 314
Jacksonville 251
San Jose 231
Santa Clara 218
Seattle 218
Ann Arbor 201
Beijing 198
Cambridge 195
Wilmington 193
Hong Kong 172
Chandler 146
Ho Chi Minh City 84
Nanjing 82
Izmir 77
Los Angeles 57
Tokyo 55
Hanoi 52
Princeton 50
San Diego 48
Addison 47
Boardman 45
Lauterbourg 41
Dallas 40
New York 38
Mexico City 35
Milan 33
Ferrara 31
Nanchang 29
São Paulo 29
Shanghai 27
Shenyang 27
Orem 24
Chicago 22
The Dalles 21
London 20
Brooklyn 19
Jiaxing 18
Moscow 18
Ottawa 18
Hefei 16
Munich 16
Warsaw 16
Boston 15
Changsha 14
San Francisco 14
Chennai 13
Haiphong 13
Helsinki 13
Tianjin 13
Auburn Hills 12
Johannesburg 12
Poplar 12
Amsterdam 11
Denver 11
Manchester 11
Rio de Janeiro 11
Stockholm 11
Brussels 10
Falkenstein 9
Hebei 9
Montreal 9
Nairobi 9
Settimo Milanese 9
Brasília 8
Mountain View 8
Ningbo 8
Xian 8
Curitiba 7
Dearborn 7
Redwood City 7
San Mateo 7
Atlanta 6
Baghdad 6
Belo Horizonte 6
Bologna 6
Da Nang 6
Falls Church 6
Frankfurt am Main 6
Verona 6
Indiana 5
Kunming 5
Norwalk 5
Phoenix 5
Rome 5
Amman 4
Ankara 4
Campinas 4
Ciudad del Este 4
Fortaleza 4
Guangzhou 4
Istanbul 4
Jinan 4
Kansas City 4
Lahore 4
Manaus 4
Mumbai 4
Totale 5.877
Nome #
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 233
Constant charge erasing scheme for Flash Memories 217
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 212
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 210
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 210
Erratic bits in flash memories under Fowler-Nordheim programming 206
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 206
Overerase Phenomena: An Insight into Flash memory Reliability 204
Monte-Carlo Simulations of Flash Memory Array Retention 198
Statistical Methodologies for Integrated Circuits Design 197
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 197
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 197
A New Analytical Model of the Erasing Operation in Phase Change Memories 196
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 194
Analysis and Optimization of Erasing Waveform in Phase Change Memory Arrays 193
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 185
Erratic bits in Flash memories under Fowler-Nordheim programming 181
Electrical Characterization and Modeling of Phase Change Memory arrays 179
Reliability and performance characterization of a mems-based non-volatile switch 177
Dynamics of Fast-Erasing Bits in Flash Memories 173
Analysis of Erratic Bits in FLASH Memories 173
Analysis of Erratic Bits in Flash Memories 172
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 169
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 167
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 166
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 165
Reliability of erasing operation in NOR-Flash memories 163
Reliability of Floating Gate Memories 160
Evidence of erratic behaviors in p-channel floating gate memories and cell architectural solution 158
Drain-accelerated degradation of tunnel oxides in Flash memories 157
Affidabilità di sistemi wireless 156
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 154
Statistical Modeling of Secondary Path during Erase Operation in Phase Change Memories 154
Erratic Erase in Flash Memories (part I): Basic Experimental and Statistical Characterization 153
Modeling of SET Seasoning Effects in Phase Change Memory Arrays 153
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories 153
Impact of High Tunneling Electric Fields on Erasing Instabilities in NOR-Flash Memories 148
Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories 145
Reliability in Wireless Systems 145
Flash Memory Reliability: an Improvement Against Erratic Erase Phenomena Using the Constant Charge Erasing Scheme 140
Experimental characterization of SET Seasoning on Phase Change Memory arrays 138
Flash Memory Reliability: an improvement against Erratic Erase phenomena using the Constant Charge Erasing Scheme 137
Reliability of Flash Memory Erasing Operation under High Tunneling Electric Fields 129
Ultra-short pulses improving performance and reliability in flash memories 127
Generation rate of Erratic bits in Flash Memories 127
Erratic erase in flash memories - Part II: Dependence on operating conditions 123
Reliability of NAND Flash Memories 123
Pulsed Tunnel Operating Non Volatile Flash Memories with SILC Reduction 84
Anomalous charge loss from Floating-Gate Memory Cells due to heavy ions irradiation 66
Totale 8.170
Categoria #
all - tutte 33.927
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.273
Totale 36.200


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021171 0 0 0 0 0 0 0 0 0 82 61 28
2021/2022571 13 81 66 11 13 23 33 27 15 36 72 181
2022/2023423 51 2 13 47 62 78 27 36 63 2 29 13
2023/2024185 36 23 6 9 6 5 6 20 7 13 0 54
2024/2025966 29 53 76 4 108 126 57 67 85 114 169 78
2025/20262.704 254 173 249 431 507 166 302 134 248 240 0 0
Totale 8.170