CHIMENTON, Andrea
 Distribuzione geografica
Continente #
NA - Nord America 4.234
AS - Asia 1.641
EU - Europa 862
SA - Sud America 306
AF - Africa 31
AN - Antartide 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 7.076
Nazione #
US - Stati Uniti d'America 4.140
SG - Singapore 620
CN - Cina 562
BR - Brasile 266
UA - Ucraina 239
HK - Hong Kong 163
DE - Germania 141
GB - Regno Unito 139
TR - Turchia 117
IT - Italia 92
VN - Vietnam 91
FI - Finlandia 62
RU - Federazione Russa 51
MX - Messico 48
SE - Svezia 44
CA - Canada 37
FR - Francia 25
IN - India 22
ZA - Sudafrica 18
AR - Argentina 17
PL - Polonia 16
ES - Italia 14
BD - Bangladesh 12
NL - Olanda 12
JP - Giappone 11
BE - Belgio 10
IQ - Iraq 7
PY - Paraguay 7
EC - Ecuador 6
ID - Indonesia 6
MA - Marocco 5
AE - Emirati Arabi Uniti 4
KR - Corea 4
LT - Lituania 4
CZ - Repubblica Ceca 3
DO - Repubblica Dominicana 3
EG - Egitto 3
GR - Grecia 3
JO - Giordania 3
KE - Kenya 3
NP - Nepal 3
VE - Venezuela 3
BO - Bolivia 2
CH - Svizzera 2
CO - Colombia 2
GT - Guatemala 2
KZ - Kazakistan 2
PE - Perù 2
PK - Pakistan 2
AQ - Antartide 1
BH - Bahrain 1
CL - Cile 1
CY - Cipro 1
ET - Etiopia 1
EU - Europa 1
GD - Grenada 1
HR - Croazia 1
HU - Ungheria 1
IL - Israele 1
KG - Kirghizistan 1
KW - Kuwait 1
KY - Cayman, isole 1
LB - Libano 1
LK - Sri Lanka 1
MK - Macedonia 1
OM - Oman 1
PA - Panama 1
PT - Portogallo 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
SY - Repubblica araba siriana 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
UZ - Uzbekistan 1
Totale 7.076
Città #
Fairfield 573
Woodbridge 492
Singapore 373
Houston 314
Ashburn 311
Jacksonville 249
Seattle 218
Santa Clara 216
Ann Arbor 201
Cambridge 195
Wilmington 193
Beijing 191
Hong Kong 163
Chandler 146
Nanjing 82
Izmir 77
Los Angeles 54
Princeton 50
San Diego 48
Addison 47
Boardman 45
Ho Chi Minh City 39
New York 34
Mexico City 33
Milan 32
Ferrara 31
Dallas 30
Nanchang 29
Shenyang 27
Shanghai 25
São Paulo 25
Hanoi 24
Chicago 21
Brooklyn 19
London 19
Jiaxing 18
Moscow 18
Ottawa 18
The Dalles 18
Munich 16
Boston 15
Hefei 15
Changsha 14
Warsaw 14
San Francisco 13
Tianjin 13
Auburn Hills 12
Poplar 12
Denver 11
Helsinki 11
Rio de Janeiro 11
Tokyo 11
Brussels 10
Stockholm 10
Amsterdam 9
Chennai 9
Falkenstein 9
Hebei 9
Johannesburg 9
Settimo Milanese 9
Brasília 8
Mountain View 8
Ningbo 8
Orem 8
Xian 8
Curitiba 7
Dearborn 7
Montreal 7
Redwood City 7
San Mateo 7
Atlanta 6
Belo Horizonte 6
Falls Church 6
Manchester 6
Verona 6
Frankfurt am Main 5
Haiphong 5
Indiana 5
Kunming 5
Norwalk 5
Ankara 4
Campinas 4
Guangzhou 4
Jinan 4
Kansas City 4
Manaus 4
Philadelphia 4
Phoenix 4
Rome 4
Salt Lake City 4
San Jose 4
Zhengzhou 4
Amman 3
Athens 3
Baghdad 3
Blumenau 3
Calgary 3
Changchun 3
Charlotte 3
Ciudad del Este 3
Totale 5.142
Nome #
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 200
Constant charge erasing scheme for Flash Memories 186
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 183
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 179
Erratic bits in flash memories under Fowler-Nordheim programming 177
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 177
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 177
Statistical Methodologies for Integrated Circuits Design 175
Overerase Phenomena: An Insight into Flash memory Reliability 174
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 170
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 170
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 169
Analysis and Optimization of Erasing Waveform in Phase Change Memory Arrays 165
Erratic bits in Flash memories under Fowler-Nordheim programming 164
Electrical Characterization and Modeling of Phase Change Memory arrays 164
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 164
A New Analytical Model of the Erasing Operation in Phase Change Memories 162
Monte-Carlo Simulations of Flash Memory Array Retention 161
Reliability and performance characterization of a mems-based non-volatile switch 157
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 155
Dynamics of Fast-Erasing Bits in Flash Memories 155
Analysis of Erratic Bits in Flash Memories 153
Analysis of Erratic Bits in FLASH Memories 152
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 149
Reliability of erasing operation in NOR-Flash memories 148
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 148
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 145
Statistical Modeling of Secondary Path during Erase Operation in Phase Change Memories 143
Modeling of SET Seasoning Effects in Phase Change Memory Arrays 140
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 139
Evidence of erratic behaviors in p-channel floating gate memories and cell architectural solution 137
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories 137
Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories 134
Impact of High Tunneling Electric Fields on Erasing Instabilities in NOR-Flash Memories 134
Drain-accelerated degradation of tunnel oxides in Flash memories 133
Reliability of Floating Gate Memories 130
Erratic Erase in Flash Memories (part I): Basic Experimental and Statistical Characterization 129
Flash Memory Reliability: an improvement against Erratic Erase phenomena using the Constant Charge Erasing Scheme 128
Affidabilità di sistemi wireless 126
Flash Memory Reliability: an Improvement Against Erratic Erase Phenomena Using the Constant Charge Erasing Scheme 122
Reliability in Wireless Systems 121
Experimental characterization of SET Seasoning on Phase Change Memory arrays 119
Ultra-short pulses improving performance and reliability in flash memories 116
Reliability of Flash Memory Erasing Operation under High Tunneling Electric Fields 113
Erratic erase in flash memories - Part II: Dependence on operating conditions 108
Generation rate of Erratic bits in Flash Memories 105
Reliability of NAND Flash Memories 91
Pulsed Tunnel Operating Non Volatile Flash Memories with SILC Reduction 68
Anomalous charge loss from Floating-Gate Memory Cells due to heavy ions irradiation 53
Totale 7.105
Categoria #
all - tutte 31.872
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.085
Totale 33.957


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021371 0 0 0 0 0 74 31 78 17 82 61 28
2021/2022571 13 81 66 11 13 23 33 27 15 36 72 181
2022/2023423 51 2 13 47 62 78 27 36 63 2 29 13
2023/2024185 36 23 6 9 6 5 6 20 7 13 0 54
2024/2025966 29 53 76 4 108 126 57 67 85 114 169 78
2025/20261.639 254 173 249 431 507 25 0 0 0 0 0 0
Totale 7.105