Experimental results show that the use of high electric fields during erasing of flash memories leads to a degradation of the reliability due to the increase of the erratic erase. The generation of new erratic bits during cycling has been related to the Anode Hole Injection phenomena.
Reliability of Flash Memory Erasing Operation under High Tunneling Electric Fields
Chimenton A.;Olivo P.
2004
Abstract
Experimental results show that the use of high electric fields during erasing of flash memories leads to a degradation of the reliability due to the increase of the erratic erase. The generation of new erratic bits during cycling has been related to the Anode Hole Injection phenomena.File in questo prodotto:
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