This work presents experimental results concerning erratic behavior in flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight into their physical nature. The particular shape of the experimental erase curves allows the derivation of a nearly linear relationship between the amplitude of erratic threshold shifts and the equivalent barrier height controlling Fowler-Nordheim injection
Analysis of Erratic Bits in Flash Memories
Chimenton A.;Pellati P.;Olivo P.
2001
Abstract
This work presents experimental results concerning erratic behavior in flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight into their physical nature. The particular shape of the experimental erase curves allows the derivation of a nearly linear relationship between the amplitude of erratic threshold shifts and the equivalent barrier height controlling Fowler-Nordheim injectionFile in questo prodotto:
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