Fowler-Nordheim erase in Flash Memories is intrinsically affected by the erratic phenomenonwhose origin has physical aspects that are still obscure. This work presents new experimental results showing the impact of the oxide thickness on the erratic erase during cycling. The collected statistical results play a key role for the study of the charging/discharging properties of tunneling oxides.
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories
CHIMENTON, Andrea;OLIVO, Piero
2002
Abstract
Fowler-Nordheim erase in Flash Memories is intrinsically affected by the erratic phenomenonwhose origin has physical aspects that are still obscure. This work presents new experimental results showing the impact of the oxide thickness on the erratic erase during cycling. The collected statistical results play a key role for the study of the charging/discharging properties of tunneling oxides.File in questo prodotto:
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