SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

BOSI, Gianni
 Distribuzione geografica
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Continente #
NA - Nord America 3.237
EU - Europa 921
AS - Asia 712
SA - Sud America 101
AF - Africa 4
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 2
Totale 4.980
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Nazione #
US - Stati Uniti d'America 3.212
IT - Italia 373
SG - Singapore 322
CN - Cina 241
PL - Polonia 166
UA - Ucraina 117
TR - Turchia 101
BR - Brasile 95
DE - Germania 84
GB - Regno Unito 57
SE - Svezia 54
FI - Finlandia 28
CA - Canada 24
ID - Indonesia 13
HK - Hong Kong 11
LT - Lituania 9
AT - Austria 8
FR - Francia 5
NL - Olanda 5
JP - Giappone 4
RU - Federazione Russa 4
BE - Belgio 3
BG - Bulgaria 3
IQ - Iraq 3
KR - Corea 3
UZ - Uzbekistan 3
A2 - ???statistics.table.value.countryCode.A2??? 2
CZ - Repubblica Ceca 2
JO - Giordania 2
MA - Marocco 2
OM - Oman 2
PE - Perù 2
VN - Vietnam 2
AR - Argentina 1
AU - Australia 1
CH - Svizzera 1
CL - Cile 1
CO - Colombia 1
DZ - Algeria 1
EG - Egitto 1
EU - Europa 1
GE - Georgia 1
IE - Irlanda 1
IN - India 1
MX - Messico 1
MY - Malesia 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
PS - Palestinian Territory 1
RS - Serbia 1
VE - Venezuela 1
Totale 4.980
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Città #
Fairfield 510
Woodbridge 372
Ashburn 302
Houston 275
Ferrara 214
Seattle 186
Wilmington 171
Cambridge 170
Warsaw 166
Chandler 157
Jacksonville 150
Santa Clara 146
Ann Arbor 140
Singapore 99
Nanjing 53
Izmir 47
Princeton 47
Beijing 45
Dearborn 33
Shanghai 31
Bologna 30
Boardman 28
San Diego 26
Los Angeles 22
Milan 22
Nanchang 20
Toronto 19
Addison 16
Shenyang 15
Washington 14
Jakarta 13
Kunming 12
Hong Kong 11
London 11
Mountain View 9
Des Moines 8
Ferrara di Monte Baldo 8
Norwalk 8
Tianjin 8
Auburn Hills 7
Bremen 7
Hebei 7
Jiaxing 7
Council Bluffs 6
Frankfurt am Main 6
Jinan 6
Orange 6
Rome 6
Vienna 6
Changsha 5
Ottawa 5
Amsterdam 4
Cagliari 4
Falkenstein 4
Falls Church 4
Settimo Milanese 4
The Dalles 4
Zhengzhou 4
Brussels 3
Campinas 3
Castel Maggiore 3
Indiana 3
Massapequa 3
Redwood City 3
Sorocaba 3
Vancouver 3
Amman 2
Arco 2
Baghdad 2
Chicago 2
Curitiba 2
Dong Ket 2
Governador Valadares 2
Haikou 2
Helsinki 2
Kilburn 2
Lençóis Paulista 2
Lima 2
Maceió 2
Modena 2
Muscat 2
Naples 2
Ningbo 2
Nuremberg 2
Ribeirão Preto 2
Rimini 2
Rio de Janeiro 2
Saint Paul 2
Salvador 2
San Mateo 2
São Paulo 2
Taiyuan 2
Turin 2
Usmate Velate 2
Acton 1
Adamantina 1
Alexandria 1
Angra dos Reis 1
Anápolis 1
Araxá 1
Totale 3.802
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Nome #
NONLINEAR TRANSISTOR MODELS AND DESIGN TECHNIQUES FOR HIGH-EFFICIENCY MICROWAVE POWER AMPLIFIERS 191
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 176
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 147
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 144
Extremely Low-Frequency Measurements Using an Active Bias Tee 137
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 135
Behavioral Modeling of GaN FETs: a Load-Line Approach 133
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 132
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 126
Waveform engineering: State-of-the-art and future trends (invited paper) 123
A GaN power amplifier for 100 VDC bus in GPS L-band 122
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 118
Linear versus nonlinear de-embedding: Experimental investigation 118
Evaluation of FET performance and restrictions by low-frequency measurements 117
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 115
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 115
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 114
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 114
75-VDC GaN technology investigation from a degradation perspective 112
null 110
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 110
Microwave FET model identification based on vector intermodulation measurements 109
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 108
null 108
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 104
null 102
Non-linear look-up table modeling of GaAs HEMTs for mixer application 100
null 100
null 97
Extended operation of class-F power amplifiers using input waveform engineering 95
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 91
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 87
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 87
null 82
Impact of transistor model uncertainty on microwave load-pull simulations 80
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 79
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 78
null 63
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 62
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 58
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 57
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 38
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 35
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 35
A new description of fast charge-trapping effects in GaN FETs 35
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 33
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 33
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 32
A neural network approach for nonlinear modelling of LDMOSFETs 32
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) 31
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 31
Maximizing the benefit of existing equipment for nonlinear and communication measurements 30
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 29
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 29
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 27
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 27
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 26
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 25
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 21
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 20
Gate waveform effects on high-efficiency PA design: An experimental validation 15
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past 14
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 14
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 10
Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22and h21: An Effective Machine Learning Approach 9
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 9
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 8
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 6
GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks 6
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 5
Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT 4
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 4
Totale 5.129
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Categoria #
all - tutte 27.900
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 27.900
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020159 0 0 0 0 0 0 0 0 0 78 51 30
2020/2021684 43 85 33 73 47 53 50 79 21 86 52 62
2021/2022430 15 27 28 5 24 29 19 31 22 46 52 132
2022/2023439 48 0 10 30 66 84 30 50 73 4 32 12
2023/2024396 28 56 33 21 34 51 17 22 7 26 16 85
2024/2025766 25 33 98 17 224 26 60 129 147 7 0 0
Totale 5.129