SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

BOSI, Gianni
 Distribuzione geografica
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Continente #
NA - Nord America 4.417
AS - Asia 2.425
EU - Europa 1.299
SA - Sud America 484
AF - Africa 66
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 2
Totale 8.696
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Nazione #
US - Stati Uniti d'America 4.311
SG - Singapore 986
CN - Cina 523
IT - Italia 435
BR - Brasile 392
HK - Hong Kong 263
VN - Vietnam 245
PL - Polonia 188
UA - Ucraina 130
DE - Germania 116
TR - Turchia 110
GB - Regno Unito 88
JP - Giappone 84
FR - Francia 75
RU - Federazione Russa 72
SE - Svezia 65
IN - India 51
CA - Canada 46
MX - Messico 45
FI - Finlandia 34
AR - Argentina 33
BD - Bangladesh 33
ZA - Sudafrica 24
ID - Indonesia 23
NL - Olanda 17
AT - Austria 16
CO - Colombia 15
EC - Ecuador 15
ES - Italia 15
TW - Taiwan 15
LT - Lituania 14
UZ - Uzbekistan 13
IQ - Iraq 12
MA - Marocco 11
VE - Venezuela 11
PK - Pakistan 8
TN - Tunisia 8
EG - Egitto 7
JO - Giordania 7
MY - Malesia 7
PE - Perù 7
SA - Arabia Saudita 7
KR - Corea 6
OM - Oman 6
AE - Emirati Arabi Uniti 5
AZ - Azerbaigian 5
CH - Svizzera 5
CL - Cile 5
DZ - Algeria 5
PH - Filippine 5
BG - Bulgaria 4
CZ - Repubblica Ceca 4
IE - Irlanda 4
KE - Kenya 4
UY - Uruguay 4
AL - Albania 3
BE - Belgio 3
HN - Honduras 3
NP - Nepal 3
RS - Serbia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
CR - Costa Rica 2
GT - Guatemala 2
JM - Giamaica 2
PA - Panama 2
TT - Trinidad e Tobago 2
AO - Angola 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BO - Bolivia 1
CI - Costa d'Avorio 1
DK - Danimarca 1
DM - Dominica 1
ET - Etiopia 1
EU - Europa 1
GE - Georgia 1
HR - Croazia 1
IL - Israele 1
LV - Lettonia 1
LY - Libia 1
ME - Montenegro 1
MK - Macedonia 1
MZ - Mozambico 1
NG - Nigeria 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
PS - Palestinian Territory 1
PT - Portogallo 1
PY - Paraguay 1
QA - Qatar 1
SI - Slovenia 1
SN - Senegal 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
Totale 8.696
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Città #
Singapore 580
Ashburn 546
Fairfield 510
Woodbridge 372
Houston 278
Hong Kong 257
Ferrara 225
San Jose 214
Seattle 191
Warsaw 186
Wilmington 173
Beijing 172
Cambridge 170
Santa Clara 165
Chandler 157
Jacksonville 150
Ann Arbor 140
Dallas 139
Tokyo 81
Los Angeles 76
Hanoi 69
Ho Chi Minh City 63
Lauterbourg 57
Nanjing 53
Izmir 48
Princeton 47
The Dalles 38
Mexico City 35
Shanghai 34
Bologna 33
Dearborn 33
São Paulo 32
Boardman 29
Milan 28
Chicago 27
San Diego 26
Hefei 25
Toronto 23
Council Bluffs 22
Nanchang 20
New York 19
San Francisco 17
Washington 17
Addison 16
Moscow 16
Orem 16
Rio de Janeiro 16
Brooklyn 15
Chennai 15
Haiphong 15
London 15
Shenyang 15
Frankfurt am Main 14
Jakarta 14
Taipei 14
Amsterdam 12
Kunming 12
Stockholm 12
Da Nang 11
Johannesburg 11
Rome 11
Denver 10
Salt Lake City 10
Curitiba 9
Mountain View 9
Tianjin 9
Assago 8
Atlanta 8
Belo Horizonte 8
Des Moines 8
Ferrara di Monte Baldo 8
Norwalk 8
Tashkent 8
Vienna 8
Amman 7
Auburn Hills 7
Boston 7
Bremen 7
Charlotte 7
Columbus 7
Guangzhou 7
Guayaquil 7
Hebei 7
Hải Dương 7
Jiaxing 7
Medellín 7
Mumbai 7
Zhengzhou 7
Baghdad 6
Biên Hòa 6
Can Tho 6
Falkenstein 6
Guarulhos 6
Jinan 6
Maceió 6
Manchester 6
Montreal 6
Orange 6
Uberlândia 6
Buenos Aires 5
Totale 6.107
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Nome #
NONLINEAR TRANSISTOR MODELS AND DESIGN TECHNIQUES FOR HIGH-EFFICIENCY MICROWAVE POWER AMPLIFIERS 272
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 269
A GaN power amplifier for 100 VDC bus in GPS L-band 202
75-VDC GaN technology investigation from a degradation perspective 199
Extremely low-frequency measurements using an active bias tee 198
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 198
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 197
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 197
Linear versus nonlinear de-embedding: Experimental investigation 189
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 186
Behavioral Modeling of GaN FETs: a Load-Line Approach 185
Waveform engineering: State-of-the-art and future trends (invited paper) 184
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 183
Evaluation of FET performance and restrictions by low-frequency measurements 180
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 176
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 175
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 171
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 168
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 166
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 166
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 161
Microwave FET model identification based on vector intermodulation measurements 160
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 152
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 146
Extended operation of class-F power amplifiers using input waveform engineering 141
Non-linear look-up table modeling of GaAs HEMTs for mixer application 137
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 136
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 132
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 130
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 122
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 118
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) 117
A new description of fast charge-trapping effects in GaN FETs 117
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 116
Impact of transistor model uncertainty on microwave load-pull simulations 113
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 110
null 110
null 108
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 106
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 105
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 103
null 102
null 100
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 99
null 97
A neural network approach for nonlinear modelling of LDMOSFETs 96
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 95
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 88
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 88
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 88
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 84
null 82
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 79
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 73
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 72
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past 70
Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22and h21: An Effective Machine Learning Approach 69
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 68
GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks 64
null 63
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 62
Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT 61
Maximizing the benefit of existing equipment for nonlinear and communication measurements 61
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 60
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 60
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 59
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 57
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 56
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 56
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 54
Gate waveform effects on high-efficiency PA design: An experimental validation 52
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 49
100W and 80% Efficiency GaN PA for VHF Space-Borne Earth Sensing Applications 34
Characterization Procedure for Effective Evaluation of III-V Compound Semiconductor Technology 30
Characterization and Modeling of Dual-Input Doherty Power Amplifier for High Efficiency and Bandwidth 25
Rethinking Microwave Power-Bar Characterization 19
Totale 8.873
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Categoria #
all - tutte 41.296
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 41.296
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021200 0 0 0 0 0 0 0 0 0 86 52 62
2021/2022430 15 27 28 5 24 29 19 31 22 46 52 132
2022/2023439 48 0 10 30 66 84 30 50 73 4 32 12
2023/2024396 28 56 33 21 34 51 17 22 7 26 16 85
2024/20251.243 25 33 98 17 224 26 60 129 147 164 229 91
2025/20263.267 280 218 406 379 529 236 426 167 342 284 0 0
Totale 8.873