BOSI, Gianni
 Distribuzione geografica
Continente #
NA - Nord America 4.744
AS - Asia 2.503
EU - Europa 1.338
SA - Sud America 490
Continente sconosciuto - Info sul continente non disponibili 183
AF - Africa 66
OC - Oceania 2
Totale 9.326
Nazione #
US - Stati Uniti d'America 4.618
SG - Singapore 1.008
CN - Cina 546
IT - Italia 468
BR - Brasile 394
HK - Hong Kong 268
VN - Vietnam 246
PL - Polonia 190
UA - Ucraina 130
DE - Germania 116
TR - Turchia 110
GB - Regno Unito 89
JP - Giappone 84
FR - Francia 75
RU - Federazione Russa 72
SE - Svezia 65
CA - Canada 59
BD - Bangladesh 56
IN - India 51
MX - Messico 46
AR - Argentina 34
FI - Finlandia 34
ZA - Sudafrica 24
ID - Indonesia 23
NL - Olanda 17
AT - Austria 16
CO - Colombia 16
EC - Ecuador 16
ES - Italia 16
TW - Taiwan 15
LT - Lituania 14
UZ - Uzbekistan 13
IQ - Iraq 12
MA - Marocco 11
MY - Malesia 11
VE - Venezuela 11
PK - Pakistan 8
TN - Tunisia 8
EG - Egitto 7
JO - Giordania 7
PE - Perù 7
SA - Arabia Saudita 7
KR - Corea 6
OM - Oman 6
AE - Emirati Arabi Uniti 5
AZ - Azerbaigian 5
CH - Svizzera 5
CL - Cile 5
DZ - Algeria 5
PH - Filippine 5
BG - Bulgaria 4
CZ - Repubblica Ceca 4
IE - Irlanda 4
KE - Kenya 4
UY - Uruguay 4
AL - Albania 3
BE - Belgio 3
CR - Costa Rica 3
HN - Honduras 3
JM - Giamaica 3
NP - Nepal 3
RS - Serbia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BA - Bosnia-Erzegovina 2
BO - Bolivia 2
GT - Guatemala 2
PA - Panama 2
SV - El Salvador 2
TT - Trinidad e Tobago 2
AO - Angola 1
AU - Australia 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BS - Bahamas 1
CI - Costa d'Avorio 1
DK - Danimarca 1
DM - Dominica 1
ET - Etiopia 1
EU - Europa 1
GE - Georgia 1
GR - Grecia 1
HR - Croazia 1
IL - Israele 1
LV - Lettonia 1
LY - Libia 1
ME - Montenegro 1
MK - Macedonia 1
MZ - Mozambico 1
NG - Nigeria 1
NI - Nicaragua 1
NZ - Nuova Zelanda 1
PR - Porto Rico 1
PS - Palestinian Territory 1
PT - Portogallo 1
PY - Paraguay 1
QA - Qatar 1
SI - Slovenia 1
SN - Senegal 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
Totale 9.146
Città #
Singapore 588
Ashburn 559
Fairfield 510
Woodbridge 372
San Jose 301
Houston 282
Hong Kong 261
Ferrara 225
Seattle 191
Warsaw 186
Santa Clara 178
Beijing 175
Wilmington 173
Cambridge 170
Chandler 157
Jacksonville 150
Dallas 148
Ann Arbor 140
Los Angeles 84
Tokyo 81
Hanoi 69
Council Bluffs 65
Ho Chi Minh City 63
Lauterbourg 57
Nanjing 53
Izmir 48
Princeton 47
The Dalles 38
New York 37
Bologna 36
Mexico City 36
Dearborn 34
Milan 34
Shanghai 34
São Paulo 32
Toronto 30
Boardman 29
Chicago 28
San Diego 26
Hefei 25
Nanchang 20
Orem 18
San Francisco 18
Washington 17
Addison 16
Brooklyn 16
London 16
Moscow 16
Rio de Janeiro 16
Chennai 15
Haiphong 15
Shenyang 15
Frankfurt am Main 14
Jakarta 14
Rome 14
Taipei 14
Amsterdam 12
Kunming 12
Stockholm 12
Da Nang 11
Denver 11
Johannesburg 11
Salt Lake City 10
Columbus 9
Curitiba 9
Mountain View 9
Tianjin 9
Assago 8
Atlanta 8
Belo Horizonte 8
Buffalo 8
Charlotte 8
Des Moines 8
Ferrara di Monte Baldo 8
Guayaquil 8
Norwalk 8
Tashkent 8
Vienna 8
Amman 7
Auburn Hills 7
Boston 7
Bremen 7
Guangzhou 7
Hebei 7
Hải Dương 7
Jiaxing 7
Medellín 7
Mumbai 7
Zhengzhou 7
Baghdad 6
Biên Hòa 6
Can Tho 6
Changsha 6
Falkenstein 6
Guarulhos 6
Jinan 6
Maceió 6
Manchester 6
Montreal 6
Orange 6
Totale 6.352
Nome #
NONLINEAR TRANSISTOR MODELS AND DESIGN TECHNIQUES FOR HIGH-EFFICIENCY MICROWAVE POWER AMPLIFIERS 300
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 279
A GaN power amplifier for 100 VDC bus in GPS L-band 208
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 207
75-VDC GaN technology investigation from a degradation perspective 203
Extremely low-frequency measurements using an active bias tee 202
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 199
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 198
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 197
Linear versus nonlinear de-embedding: Experimental investigation 192
Behavioral Modeling of GaN FETs: a Load-Line Approach 191
Waveform engineering: State-of-the-art and future trends (invited paper) 191
Evaluation of FET performance and restrictions by low-frequency measurements 190
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 189
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 180
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 178
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 177
Microwave FET model identification based on vector intermodulation measurements 176
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 172
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 171
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 167
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 167
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 155
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 148
Extended operation of class-F power amplifiers using input waveform engineering 146
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 141
Non-linear look-up table modeling of GaAs HEMTs for mixer application 137
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 134
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 133
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 128
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 125
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) 124
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 121
A new description of fast charge-trapping effects in GaN FETs 120
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 119
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 118
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 117
Impact of transistor model uncertainty on microwave load-pull simulations 114
null 110
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 110
null 108
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 108
null 102
A neural network approach for nonlinear modelling of LDMOSFETs 101
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 100
null 100
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 99
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 98
null 97
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 89
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 89
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 86
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past 84
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 84
null 82
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 78
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 77
Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22and h21: An Effective Machine Learning Approach 75
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 71
GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks 67
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 66
Maximizing the benefit of existing equipment for nonlinear and communication measurements 66
Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT 65
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 65
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 63
null 63
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 63
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 62
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 59
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 59
Gate waveform effects on high-efficiency PA design: An experimental validation 55
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 52
100W and 80% Efficiency GaN PA for VHF Space-Borne Earth Sensing Applications 50
Characterization Procedure for Effective Evaluation of III-V Compound Semiconductor Technology 40
Characterization and Modeling of Dual-Input Doherty Power Amplifier for High Efficiency and Bandwidth 37
Rethinking Microwave Power-Bar Characterization 28
800 W Efficient GaN SSPA for VHF Space Radar 4
Totale 9.326
Categoria #
all - tutte 45.695
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 45.695


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022430 15 27 28 5 24 29 19 31 22 46 52 132
2022/2023439 48 0 10 30 66 84 30 50 73 4 32 12
2023/2024396 28 56 33 21 34 51 17 22 7 26 16 85
2024/20251.243 25 33 98 17 224 26 60 129 147 164 229 91
2025/20263.569 280 218 406 379 529 236 426 167 342 377 140 69
2026/2027151 151 0 0 0 0 0 0 0 0 0 0 0
Totale 9.326