BOSI, Gianni
 Distribuzione geografica
Continente #
NA - Nord America 3.000
EU - Europa 824
AS - Asia 413
Continente sconosciuto - Info sul continente non disponibili 3
AF - Africa 2
OC - Oceania 2
SA - Sud America 2
Totale 4.246
Nazione #
US - Stati Uniti d'America 2.995
IT - Italia 330
CN - Cina 230
PL - Polonia 166
UA - Ucraina 112
TR - Turchia 100
DE - Germania 67
SG - Singapore 67
SE - Svezia 53
GB - Regno Unito 49
FI - Finlandia 26
CA - Canada 5
FR - Francia 5
ID - Indonesia 5
NL - Olanda 5
HK - Hong Kong 4
AT - Austria 3
BG - Bulgaria 3
JP - Giappone 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BR - Brasile 2
MA - Marocco 2
RU - Federazione Russa 2
VN - Vietnam 2
AU - Australia 1
CH - Svizzera 1
EU - Europa 1
IE - Irlanda 1
IN - India 1
MY - Malesia 1
NZ - Nuova Zelanda 1
RS - Serbia 1
Totale 4.246
Città #
Fairfield 510
Woodbridge 372
Ashburn 298
Houston 275
Ferrara 193
Seattle 186
Wilmington 171
Cambridge 170
Warsaw 166
Chandler 157
Jacksonville 150
Ann Arbor 140
Nanjing 53
Izmir 47
Princeton 47
Beijing 43
Dearborn 33
Singapore 32
Shanghai 31
Boardman 28
Bologna 28
San Diego 26
Milan 20
Nanchang 20
Addison 16
Shenyang 15
Washington 14
Kunming 11
Mountain View 9
Des Moines 8
Ferrara di Monte Baldo 8
Norwalk 8
Tianjin 8
Auburn Hills 7
Hebei 7
Jiaxing 7
Los Angeles 7
Jinan 6
London 6
Orange 6
Changsha 5
Jakarta 5
Toronto 5
Amsterdam 4
Cagliari 4
Falls Church 4
Hong Kong 4
Settimo Milanese 4
Zhengzhou 4
Indiana 3
Massapequa 3
Redwood City 3
Rome 3
Vancouver 3
Vienna 3
Arco 2
Chicago 2
Dong Ket 2
Haikou 2
Kilburn 2
Modena 2
Naples 2
Ningbo 2
Saint Paul 2
San Mateo 2
Taiyuan 2
Usmate Velate 2
Acton 1
Baotou 1
Bath 1
Belgrade 1
Bremen 1
Buckeye 1
Changchun 1
Chengdu 1
Christchurch 1
Den Haag 1
Dublin 1
Florence 1
Fuzhou 1
Guangzhou 1
Hangzhou 1
Hefei 1
Istanbul 1
Lanzhou 1
Lappeenranta 1
Leipzig 1
Messina 1
Moscow 1
New Orleans 1
New York 1
Newcastle upon Tyne 1
Nuremberg 1
Nürnberg 1
Orlando 1
Paris 1
Pisa 1
Prescot 1
Pune 1
Redmond 1
Totale 3.453
Nome #
NONLINEAR TRANSISTOR MODELS AND DESIGN TECHNIQUES FOR HIGH-EFFICIENCY MICROWAVE POWER AMPLIFIERS 177
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 165
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 133
Extremely Low-Frequency Measurements Using an Active Bias Tee 128
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 121
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 120
Behavioral Modeling of GaN FETs: a Load-Line Approach 119
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 111
null 110
Linear versus nonlinear de-embedding: Experimental investigation 108
null 108
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 107
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 107
A GaN power amplifier for 100 VDC bus in GPS L-band 107
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 105
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 104
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 104
Microwave FET model identification based on vector intermodulation measurements 102
Evaluation of FET performance and restrictions by low-frequency measurements 102
null 102
Waveform engineering: State-of-the-art and future trends (invited paper) 101
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 101
null 100
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 97
null 97
75-VDC GaN technology investigation from a degradation perspective 97
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 97
Non-linear look-up table modeling of GaAs HEMTs for mixer application 94
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 93
Extended operation of class-F power amplifiers using input waveform engineering 87
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 85
null 82
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 76
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 76
Impact of transistor model uncertainty on microwave load-pull simulations 74
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 69
null 63
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 61
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 58
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 51
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 44
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 29
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 26
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 23
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 22
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 22
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 21
A neural network approach for nonlinear modelling of LDMOSFETs 19
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 18
Maximizing the benefit of existing equipment for nonlinear and communication measurements 18
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 17
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 17
A new description of fast charge-trapping effects in GaN FETs 17
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 17
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 16
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) 11
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 8
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 6
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 6
Gate waveform effects on high-efficiency PA design: An experimental validation 6
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 6
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past 3
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 3
GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks 2
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 2
Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT 1
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 1
Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22and h21: An Effective Machine Learning Approach 1
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 1
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 1
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 1
Totale 4.384
Categoria #
all - tutte 18.715
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 18.715


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.119 156 49 41 158 81 128 125 121 101 78 51 30
2020/2021684 43 85 33 73 47 53 50 79 21 86 52 62
2021/2022430 15 27 28 5 24 29 19 31 22 46 52 132
2022/2023439 48 0 10 30 66 84 30 50 73 4 32 12
2023/2024396 28 56 33 21 34 51 17 22 7 26 16 85
2024/202521 21 0 0 0 0 0 0 0 0 0 0 0
Totale 4.384