SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

RAFFO, Antonio
 Distribuzione geografica
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Continente #
NA - Nord America 12.244
EU - Europa 2.855
AS - Asia 2.525
SA - Sud America 240
AF - Africa 17
OC - Oceania 10
Continente sconosciuto - Info sul continente non disponibili 7
Totale 17.898
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Nazione #
US - Stati Uniti d'America 12.200
CN - Cina 1.001
SG - Singapore 951
IT - Italia 886
UA - Ucraina 654
TR - Turchia 445
DE - Germania 354
GB - Regno Unito 277
BR - Brasile 222
PL - Polonia 210
SE - Svezia 208
FI - Finlandia 166
CA - Canada 35
HK - Hong Kong 32
ID - Indonesia 28
NL - Olanda 18
FR - Francia 15
BE - Belgio 12
LT - Lituania 12
KR - Corea 11
AU - Australia 10
TW - Taiwan 10
AT - Austria 9
MX - Messico 8
CZ - Repubblica Ceca 7
IN - India 7
RU - Federazione Russa 7
AR - Argentina 6
IQ - Iraq 6
JP - Giappone 6
MA - Marocco 5
RO - Romania 5
A2 - ???statistics.table.value.countryCode.A2??? 4
UZ - Uzbekistan 4
VE - Venezuela 4
VN - Vietnam 4
BG - Bulgaria 3
CH - Svizzera 3
DZ - Algeria 3
EU - Europa 3
JO - Giordania 3
PK - Pakistan 3
BD - Bangladesh 2
CO - Colombia 2
EC - Ecuador 2
EG - Egitto 2
IE - Irlanda 2
LB - Libano 2
LY - Libia 2
MD - Moldavia 2
OM - Oman 2
TN - Tunisia 2
ZA - Sudafrica 2
AZ - Azerbaigian 1
BO - Bolivia 1
CL - Cile 1
CY - Cipro 1
GE - Georgia 1
GR - Grecia 1
HR - Croazia 1
KE - Kenya 1
KG - Kirghizistan 1
KH - Cambogia 1
KZ - Kazakistan 1
MY - Malesia 1
NI - Nicaragua 1
PE - Perù 1
PS - Palestinian Territory 1
PT - Portogallo 1
RS - Serbia 1
SI - Slovenia 1
UY - Uruguay 1
Totale 17.898
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Città #
Fairfield 1.850
Woodbridge 1.572
Ashburn 1.092
Houston 1.054
Jacksonville 790
Ann Arbor 691
Seattle 676
Cambridge 617
Wilmington 596
Chandler 531
Ferrara 529
Santa Clara 436
Singapore 317
Nanjing 278
Izmir 252
Warsaw 210
Princeton 200
Beijing 195
San Diego 131
Boardman 125
Nanchang 70
Shanghai 66
Dearborn 65
Los Angeles 64
Addison 61
Shenyang 61
Milan 55
Washington 48
Hebei 46
Bologna 41
Mountain View 39
Tianjin 39
Jiaxing 38
London 34
Hong Kong 31
Council Bluffs 30
Changsha 27
Jakarta 27
Kunming 27
Redwood City 27
Norwalk 26
Toronto 24
Des Moines 21
Zhengzhou 21
Auburn Hills 20
Jinan 20
Indiana 18
Falkenstein 16
Ningbo 16
Philadelphia 15
Settimo Milanese 15
Orange 14
San Mateo 14
Falls Church 13
Helsinki 13
Brussels 11
Guangzhou 11
Lanzhou 11
Ferrara di Monte Baldo 10
Rome 10
Taipei 10
Tappahannock 10
Frankfurt am Main 9
Ottawa 9
Chicago 8
Haikou 8
Redmond 8
Verona 8
Bremen 7
New York 7
Berlin 6
Kilburn 6
Lappeenranta 6
Parma 6
São Paulo 6
Taizhou 6
Amsterdam 5
Baghdad 5
Campinas 5
Curitiba 5
Hangzhou 5
Sorocaba 5
Vienna 5
Changchun 4
Hounslow 4
Prescot 4
Ribeirão Preto 4
Rio de Janeiro 4
Sumaré 4
The Dalles 4
Vicenza 4
Amman 3
Andover 3
Belo Horizonte 3
Castel Maggiore 3
Cottbus 3
Fuzhou 3
Hefei 3
Massapequa 3
Messina 3
Totale 13.571
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 305
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 195
GaN HEMT Noise Model Based on Electromagnetic Simulations 181
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 175
Neural approach for temperature-dependent modeling of GaN HEMTs 170
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 155
Measurement Uncertainty Propagation in Transistor Model Parameters via Polynomial Chaos Expansion 153
Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors 152
A procedure for the extraction of a nonlinear microwave GaN FET model 148
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 147
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 144
Microwave transistor modeling 143
Extremely Low-Frequency Measurements Using an Active Bias Tee 137
NONLINEAR EMBEDDING AND DE-EMBEDDING TECHNIQUES FOR LARGE-SIGNAL FET MEASUREMENTS 135
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 135
Behavioral Modeling of GaN FETs: a Load-Line Approach 133
GaN HEMT noise modeling based on 50-Ω noise factor 133
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 132
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 132
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 131
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 131
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 131
A new approach to Class-E power amplifier design 130
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 129
X-Band GaN Power Amplifier for Future Generation SAR Systems 128
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 128
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 127
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 126
Temperature Influence on GaN HEMT Equivalent Circuit 126
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 125
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 124
A Nonquasi-Static Empirical Model of Electron Devices 122
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 122
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 122
Waveform engineering: State-of-the-art and future trends (invited paper) 122
A GaN power amplifier for 100 VDC bus in GPS L-band 122
GaN HEMT model extraction based on dynamic-bias measurements 121
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 119
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 118
Linear versus nonlinear de-embedding: Experimental investigation 118
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 118
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 117
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 117
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 117
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 116
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 116
Evaluation of FET performance and restrictions by low-frequency measurements 116
On the use of the discrete-time convolution model for the compensation of non-idealities within digital acquisition channels 115
Automated Microwave Device Characterization Set-up Based on a Technology-Independent Generalized Bias System 115
EM-based Modeling of Cascode FETs Suitable for MMIC Design 115
Kink Effect in S22 for GaN and GaAs HEMTs 115
GaN Ku-band low-noise amplifier design including RF life test 115
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 115
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 115
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 115
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 114
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 114
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 112
Scalable nonlinear FET model based on a distributed parasitic network description 112
“Hybrid” Approach to Microwave Power Amplifier Design 112
75-VDC GaN technology investigation from a degradation perspective 112
A distributed approach for millimetre-wave electron device modelling 111
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 111
Nonlinear model for 40-GHz cold-FET operation 111
An ultra-wideband sensing board for IoT 111
Accurate EM-Based Modeling of Cascode FETs 111
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 110
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 110
null 110
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 110
Microwave FET model identification based on vector intermodulation measurements 109
Nonlinear modeling of InP devices for W-band applications 109
Automated Microwave Device Characterization Set-up Based on a Technology-independent Generalized Bias System 108
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 108
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 108
null 108
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 108
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 107
GaN power amplifier design exploiting wideband large-signal matching 107
Thermal characterization of high-power GaN HEMTs up to 65 GHz 107
On the evaluation of the high-frequency load line in active devices 106
Workshops and short courses 106
Comparison of Electron Device Models Based on Operation-specific Metrics 106
Temperature dependent vector large-signal measurements 105
Nonlinear Deembedding of Microwave Large-Signal Measurements 105
Small- Versus Large-Signal Extraction of Charge Models of Microwave FETs 104
Investigation on the Thermal Behavior of Microwave GaN HEMTs 104
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 104
Waveforms-Based Large-Signal Identification of Transistor Models 103
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 103
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation 103
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 103
Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs 102
Investigation on the non-quasi-static effect implementation for millimeter-wave FET models 102
Microwave Wireless Communications: From Transistor to System Level 102
null 102
Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects 101
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 101
null 100
Non-linear look-up table modeling of GaAs HEMTs for mixer application 100
Totale 12.176
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Categoria #
all - tutte 90.890
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.175
Totale 92.065
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020940 0 0 0 0 0 0 0 0 338 311 190 101
2020/20212.659 184 258 119 310 117 289 148 316 67 464 242 145
2021/20221.797 81 204 134 24 86 95 95 82 74 152 236 534
2022/20231.507 190 10 35 133 238 276 70 142 255 13 98 47
2023/20241.080 95 146 82 40 127 189 56 48 15 28 38 216
2024/20252.082 89 94 313 40 537 56 117 350 486 0 0 0
Totale 18.238