SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

RAFFO, Antonio
 Distribuzione geografica
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Continente #
NA - Nord America 16.554
AS - Asia 8.016
EU - Europa 3.948
SA - Sud America 1.508
Continente sconosciuto - Info sul continente non disponibili 390
AF - Africa 174
OC - Oceania 20
Totale 30.610
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Nazione #
US - Stati Uniti d'America 16.191
SG - Singapore 3.084
CN - Cina 1.887
BR - Brasile 1.190
IT - Italia 1.098
HK - Hong Kong 810
VN - Vietnam 749
UA - Ucraina 695
TR - Turchia 495
DE - Germania 435
GB - Regno Unito 387
PL - Polonia 259
SE - Svezia 243
JP - Giappone 234
FR - Francia 227
RU - Federazione Russa 198
FI - Finlandia 185
BD - Bangladesh 174
MX - Messico 159
IN - India 150
CA - Canada 136
AR - Argentina 103
ID - Indonesia 76
ZA - Sudafrica 64
IQ - Iraq 59
EC - Ecuador 56
VE - Venezuela 50
NL - Olanda 48
CO - Colombia 44
PK - Pakistan 40
ES - Italia 38
TW - Taiwan 32
UZ - Uzbekistan 31
LT - Lituania 25
MA - Marocco 25
MY - Malesia 25
SA - Arabia Saudita 25
TN - Tunisia 23
AE - Emirati Arabi Uniti 20
AT - Austria 19
PH - Filippine 19
CL - Cile 16
JO - Giordania 16
AU - Australia 15
CR - Costa Rica 15
EG - Egitto 15
JM - Giamaica 15
BE - Belgio 14
CZ - Repubblica Ceca 14
DZ - Algeria 14
NP - Nepal 14
AZ - Azerbaigian 13
KR - Corea 13
OM - Oman 12
PE - Perù 12
PY - Paraguay 12
UY - Uruguay 12
BO - Bolivia 11
KE - Kenya 11
CH - Svizzera 10
AL - Albania 7
IE - Irlanda 7
TT - Trinidad e Tobago 7
ET - Etiopia 6
GT - Guatemala 6
HN - Honduras 6
IL - Israele 5
KZ - Kazakistan 5
LB - Libano 5
NZ - Nuova Zelanda 5
RO - Romania 5
A2 - ???statistics.table.value.countryCode.A2??? 4
BG - Bulgaria 4
HR - Croazia 4
NI - Nicaragua 4
PT - Portogallo 4
RS - Serbia 4
SV - El Salvador 4
BB - Barbados 3
CI - Costa d'Avorio 3
CY - Cipro 3
EU - Europa 3
GR - Grecia 3
LY - Libia 3
PA - Panama 3
SN - Senegal 3
TH - Thailandia 3
BA - Bosnia-Erzegovina 2
DK - Danimarca 2
KG - Kirghizistan 2
KH - Cambogia 2
LV - Lettonia 2
MD - Moldavia 2
MM - Myanmar 2
MN - Mongolia 2
PS - Palestinian Territory 2
SI - Slovenia 2
SY - Repubblica araba siriana 2
AO - Angola 1
BF - Burkina Faso 1
Totale 30.205
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Città #
Ashburn 1.952
Fairfield 1.850
Singapore 1.779
Woodbridge 1.572
Houston 1.069
San Jose 861
Hong Kong 795
Jacksonville 792
Ann Arbor 691
Seattle 687
Cambridge 617
Wilmington 601
Beijing 554
Ferrara 545
Santa Clara 532
Chandler 531
Dallas 361
Nanjing 279
Warsaw 256
Izmir 255
Ho Chi Minh City 246
Tokyo 226
Princeton 200
Los Angeles 186
Council Bluffs 179
Hanoi 176
Lauterbourg 172
San Diego 134
Boardman 125
Mexico City 120
São Paulo 115
New York 95
Chicago 84
Milan 81
Shanghai 75
The Dalles 73
Nanchang 71
Dearborn 66
Hefei 65
Washington 64
Addison 61
Shenyang 61
Bologna 52
Toronto 52
London 51
Moscow 51
San Francisco 47
Tianjin 47
Hebei 46
Haiphong 43
Da Nang 39
Mountain View 39
Jiaxing 38
Orem 38
Columbus 36
Stockholm 36
Brooklyn 35
Montreal 33
Rio de Janeiro 33
Changsha 30
Jakarta 30
Norwalk 29
Chennai 28
Johannesburg 28
Taipei 28
Kunming 27
Manchester 27
Redwood City 27
Rome 27
Baghdad 26
Falkenstein 26
Frankfurt am Main 26
Atlanta 25
Belo Horizonte 25
Curitiba 24
Denver 24
Guangzhou 24
Tashkent 24
Zhengzhou 24
Helsinki 23
Salt Lake City 23
Amsterdam 22
Boston 22
Des Moines 22
Philadelphia 22
Buffalo 21
Caracas 21
Jinan 21
Auburn Hills 20
Ankara 19
Charlotte 19
Guayaquil 19
Hải Dương 18
Indiana 18
Quito 18
Phoenix 17
Amman 16
Lahore 16
Ningbo 16
Can Tho 15
Totale 20.907
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 370
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 299
GaN HEMT Noise Model Based on Electromagnetic Simulations 295
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 280
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 233
A new approach to Class-E power amplifier design 226
Neural approach for temperature-dependent modeling of GaN HEMTs 222
A procedure for the extraction of a nonlinear microwave GaN FET model 222
Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors 216
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 212
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 211
GaN HEMT noise modeling based on 50-Ω noise factor 211
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 211
Microwave transistor modeling 208
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 208
A GaN power amplifier for 100 VDC bus in GPS L-band 208
75-VDC GaN technology investigation from a degradation perspective 206
Extremely low-frequency measurements using an active bias tee 203
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 202
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 201
Measurement Uncertainty Propagation in Transistor Model Parameters via Polynomial Chaos Expansion 201
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 200
A distributed approach for millimetre-wave electron device modelling 199
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 198
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 197
X-Band GaN Power Amplifier for Future Generation SAR Systems 197
Behavioral Modeling of GaN FETs: a Load-Line Approach 195
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 194
Linear versus nonlinear de-embedding: Experimental investigation 194
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 194
Waveform engineering: State-of-the-art and future trends (invited paper) 193
A Nonquasi-Static Empirical Model of Electron Devices 192
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 192
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 190
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 190
Evaluation of FET performance and restrictions by low-frequency measurements 190
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 190
On the evaluation of the high-frequency load line in active devices 189
Kink Effect in S22 for GaN and GaAs HEMTs 189
"Hybrid" Approach to microwave power amplifier design 186
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 186
Automated Microwave Device Characterization Set-up Based on a Technology-Independent Generalized Bias System 185
Thermal characterization of high-power GaN HEMTs up to 65 GHz 185
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 185
GaN Ku-band low-noise amplifier design including RF life test 183
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 183
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 181
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 180
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 180
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 179
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 179
GaN HEMT model extraction based on dynamic-bias measurements 179
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 178
An ultra-wideband sensing board for IoT 178
Microwave FET model identification based on vector intermodulation measurements 177
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 176
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 175
Comparison of Electron Device Models Based on Operation-specific Metrics 175
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 175
Temperature Influence on GaN HEMT Equivalent Circuit 175
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 174
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 174
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 173
Waveforms-Based Large-Signal Identification of Transistor Models 170
Scalable nonlinear FET model based on a distributed parasitic network description 168
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 168
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 167
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 167
Figure di Merito e Metodologia di Confronto per Modelli Non Lineari di Dispositivi Elettronici a Microonde 167
Nonlinear modeling of InP devices for W-band applications 167
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 167
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 167
Temperature dependent vector large-signal measurements 166
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 165
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 164
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 164
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 163
Nonlinear model for 40-GHz cold-FET operation 163
Nonlinear Deembedding of Microwave Large-Signal Measurements 163
GaN power amplifier design exploiting wideband large-signal matching 162
EM-based Modeling of Cascode FETs Suitable for MMIC Design 161
Microwave Wireless Communications: From Transistor to System Level 161
Workshops and short courses 159
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 159
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 158
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 158
On the use of the discrete-time convolution model for the compensation of non-idealities within digital acquisition channels 157
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 157
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation 156
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 155
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 153
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 153
Automated Microwave Device Characterization Set-up Based on a Technology-independent Generalized Bias System 152
Accurate EM-Based Modeling of Cascode FETs 152
Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs 151
Waveforms-Only Based Nonlinear De-Embedding in Active Devices 151
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 149
Improvement of PHEMT Intermodulation Prediction Through the Accurate Modelling of Low-Frequency Dispersion Effects 147
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 147
Investigation on the Thermal Behavior of Microwave GaN HEMTs 147
Totale 18.530
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Categoria #
all - tutte 146.399
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.903
Totale 148.302
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.716 0 204 134 24 86 95 95 82 74 152 236 534
2022/20231.507 190 10 35 133 238 276 70 142 255 13 98 47
2023/20241.080 95 146 82 40 127 189 56 48 15 28 38 216
2024/20253.544 89 94 313 40 537 56 117 350 505 530 633 280
2025/202610.318 826 586 1.149 1.234 1.448 602 1.090 513 1.105 1.252 319 194
2026/2027592 328 264 0 0 0 0 0 0 0 0 0 0
Totale 30.610