SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

RAFFO, Antonio
 Distribuzione geografica
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Continente #
NA - Nord America 14.136
AS - Asia 5.808
EU - Europa 3.430
SA - Sud America 1.241
AF - Africa 104
OC - Oceania 11
Continente sconosciuto - Info sul continente non disponibili 7
Totale 24.737
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Nazione #
US - Stati Uniti d'America 13.881
SG - Singapore 2.437
CN - Cina 1.557
BR - Brasile 1.062
IT - Italia 948
HK - Hong Kong 733
UA - Ucraina 686
TR - Turchia 463
DE - Germania 405
GB - Regno Unito 354
VN - Vietnam 277
PL - Polonia 248
SE - Svezia 239
RU - Federazione Russa 191
FI - Finlandia 175
MX - Messico 138
CA - Canada 87
AR - Argentina 63
IN - India 55
BD - Bangladesh 49
ID - Indonesia 49
ZA - Sudafrica 48
NL - Olanda 36
EC - Ecuador 35
IQ - Iraq 30
JP - Giappone 30
FR - Francia 24
LT - Lituania 24
ES - Italia 23
CO - Colombia 19
VE - Venezuela 19
TW - Taiwan 18
UZ - Uzbekistan 16
AT - Austria 15
PK - Pakistan 13
BE - Belgio 12
CZ - Repubblica Ceca 12
MA - Marocco 12
CL - Cile 11
KR - Corea 11
PY - Paraguay 11
AU - Australia 10
EG - Egitto 10
JO - Giordania 10
UY - Uruguay 10
AE - Emirati Arabi Uniti 9
AZ - Azerbaigian 9
CH - Svizzera 9
DZ - Algeria 9
SA - Arabia Saudita 9
KE - Kenya 7
OM - Oman 7
PE - Perù 7
TN - Tunisia 7
JM - Giamaica 6
RO - Romania 5
TT - Trinidad e Tobago 5
A2 - ???statistics.table.value.countryCode.A2??? 4
AL - Albania 4
BG - Bulgaria 4
BO - Bolivia 4
CR - Costa Rica 4
IL - Israele 4
NP - Nepal 4
EU - Europa 3
HN - Honduras 3
LB - Libano 3
MY - Malesia 3
PA - Panama 3
SN - Senegal 3
CI - Costa d'Avorio 2
CY - Cipro 2
ET - Etiopia 2
GR - Grecia 2
GT - Guatemala 2
HR - Croazia 2
IE - Irlanda 2
KZ - Kazakistan 2
LY - Libia 2
MD - Moldavia 2
NI - Nicaragua 2
PS - Palestinian Territory 2
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BN - Brunei Darussalam 1
DM - Dominica 1
DO - Repubblica Dominicana 1
GA - Gabon 1
GE - Georgia 1
KG - Kirghizistan 1
KH - Cambogia 1
LV - Lettonia 1
MK - Macedonia 1
MN - Mongolia 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
PT - Portogallo 1
QA - Qatar 1
RS - Serbia 1
SI - Slovenia 1
Totale 24.733
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Città #
Fairfield 1.850
Woodbridge 1.572
Ashburn 1.373
Singapore 1.294
Houston 1.061
Jacksonville 792
Hong Kong 728
Ann Arbor 691
Seattle 685
Cambridge 617
Wilmington 601
Ferrara 542
Chandler 531
Beijing 490
Santa Clara 466
Dallas 339
Nanjing 278
Izmir 252
Warsaw 248
Princeton 200
Los Angeles 146
San Diego 131
Boardman 125
Mexico City 108
Ho Chi Minh City 103
São Paulo 101
Nanchang 71
Shanghai 71
Chicago 68
Dearborn 65
Hefei 65
Hanoi 62
Addison 61
Shenyang 61
Milan 60
The Dalles 57
Washington 52
Moscow 51
New York 51
London 48
Bologna 47
Hebei 46
Tianjin 46
Mountain View 39
Jiaxing 38
San Francisco 38
Columbus 33
Council Bluffs 32
Stockholm 32
Brooklyn 30
Rio de Janeiro 30
Toronto 30
Jakarta 28
Montreal 28
Changsha 27
Kunming 27
Redwood City 27
Falkenstein 26
Norwalk 26
Johannesburg 24
Tokyo 24
Belo Horizonte 23
Boston 22
Curitiba 22
Zhengzhou 22
Chennai 21
Des Moines 21
Jinan 21
Auburn Hills 20
Atlanta 19
Denver 19
Guangzhou 19
Amsterdam 18
Indiana 18
Manchester 18
Salt Lake City 18
Taipei 17
Charlotte 16
Ningbo 16
Philadelphia 16
Rome 16
Ankara 15
Orem 15
Settimo Milanese 15
Haiphong 14
Orange 14
Ribeirão Preto 14
San Mateo 14
Falls Church 13
Helsinki 13
Phoenix 12
Tashkent 12
Brasília 11
Brussels 11
Campinas 11
Guayaquil 11
Lanzhou 11
Munich 11
Salvador 11
Amman 10
Totale 17.465
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 334
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 254
GaN HEMT Noise Model Based on Electromagnetic Simulations 232
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 225
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 200
Neural approach for temperature-dependent modeling of GaN HEMTs 193
A procedure for the extraction of a nonlinear microwave GaN FET model 185
Extremely low-frequency measurements using an active bias tee 184
Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors 182
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 179
GaN HEMT noise modeling based on 50-Ω noise factor 178
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 177
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 176
Microwave transistor modeling 174
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 174
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 174
Measurement Uncertainty Propagation in Transistor Model Parameters via Polynomial Chaos Expansion 173
A new approach to Class-E power amplifier design 172
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 170
Behavioral Modeling of GaN FETs: a Load-Line Approach 170
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 170
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 169
X-Band GaN Power Amplifier for Future Generation SAR Systems 169
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 168
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 167
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 167
A GaN power amplifier for 100 VDC bus in GPS L-band 166
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 165
Linear versus nonlinear de-embedding: Experimental investigation 165
Evaluation of FET performance and restrictions by low-frequency measurements 164
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 163
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 163
75-VDC GaN technology investigation from a degradation perspective 161
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 161
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 160
"Hybrid" Approach to microwave power amplifier design 160
On the evaluation of the high-frequency load line in active devices 160
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 160
GaN HEMT model extraction based on dynamic-bias measurements 159
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 159
A Nonquasi-Static Empirical Model of Electron Devices 158
A distributed approach for millimetre-wave electron device modelling 158
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 157
Waveform engineering: State-of-the-art and future trends (invited paper) 157
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 156
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 156
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 154
Waveforms-Based Large-Signal Identification of Transistor Models 154
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 154
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 153
Automated Microwave Device Characterization Set-up Based on a Technology-Independent Generalized Bias System 152
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 152
An ultra-wideband sensing board for IoT 152
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 150
GaN Ku-band low-noise amplifier design including RF life test 150
Thermal characterization of high-power GaN HEMTs up to 65 GHz 150
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 150
Temperature Influence on GaN HEMT Equivalent Circuit 149
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 148
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 147
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 147
Nonlinear Deembedding of Microwave Large-Signal Measurements 147
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 146
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 145
Scalable nonlinear FET model based on a distributed parasitic network description 145
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 145
Comparison of Electron Device Models Based on Operation-specific Metrics 145
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 145
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 145
Nonlinear modeling of InP devices for W-band applications 144
Kink Effect in S22 for GaN and GaAs HEMTs 144
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 144
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 143
EM-based Modeling of Cascode FETs Suitable for MMIC Design 143
GaN power amplifier design exploiting wideband large-signal matching 142
Microwave FET model identification based on vector intermodulation measurements 142
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 141
Nonlinear model for 40-GHz cold-FET operation 140
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 139
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 139
Accurate EM-Based Modeling of Cascode FETs 139
Workshops and short courses 136
Automated Microwave Device Characterization Set-up Based on a Technology-independent Generalized Bias System 135
On the use of the discrete-time convolution model for the compensation of non-idealities within digital acquisition channels 134
Temperature dependent vector large-signal measurements 134
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 134
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 133
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation 133
Non-linear look-up table modeling of GaAs HEMTs for mixer application 132
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 131
Investigation on the Thermal Behavior of Microwave GaN HEMTs 130
Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs 128
Improvement of PHEMT Intermodulation Prediction Through the Accurate Modelling of Low-Frequency Dispersion Effects 128
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 128
Microwave Wireless Communications: From Transistor to System Level 128
Waveforms-Only Based Nonlinear De-Embedding in Active Devices 126
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 126
Small- Versus Large-Signal Extraction of Charge Models of Microwave FETs 125
Extended operation of class-F power amplifiers using input waveform engineering 125
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 124
Totale 15.719
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Categoria #
all - tutte 122.948
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.599
Totale 124.547
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.671 0 0 0 0 0 289 148 316 67 464 242 145
2021/20221.797 81 204 134 24 86 95 95 82 74 152 236 534
2022/20231.507 190 10 35 133 238 276 70 142 255 13 98 47
2023/20241.080 95 146 82 40 127 189 56 48 15 28 38 216
2024/20253.544 89 94 313 40 537 56 117 350 505 530 633 280
2025/20265.402 826 586 1.149 1.234 1.448 159 0 0 0 0 0 0
Totale 25.102