SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

RAFFO, Antonio
 Distribuzione geografica
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Continente #
NA - Nord America 18.479
AS - Asia 8.074
EU - Europa 4.042
SA - Sud America 1.529
Continente sconosciuto - Info sul continente non disponibili 393
AF - Africa 174
OC - Oceania 20
Totale 32.711
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Nazione #
US - Stati Uniti d'America 18.063
SG - Singapore 3.091
CN - Cina 1.900
BR - Brasile 1.205
IT - Italia 1.150
HK - Hong Kong 814
VN - Vietnam 754
UA - Ucraina 695
TR - Turchia 499
DE - Germania 441
GB - Regno Unito 407
PL - Polonia 259
SE - Svezia 243
JP - Giappone 235
FR - Francia 231
RU - Federazione Russa 199
FI - Finlandia 185
BD - Bangladesh 180
MX - Messico 161
CA - Canada 156
IN - India 151
AR - Argentina 104
ID - Indonesia 80
ZA - Sudafrica 64
IQ - Iraq 60
EC - Ecuador 57
VE - Venezuela 52
NL - Olanda 48
CO - Colombia 46
PK - Pakistan 41
ES - Italia 40
TW - Taiwan 32
UZ - Uzbekistan 31
LT - Lituania 26
MY - Malesia 26
SA - Arabia Saudita 26
MA - Marocco 25
CR - Costa Rica 23
TN - Tunisia 23
AE - Emirati Arabi Uniti 22
JM - Giamaica 22
AT - Austria 19
PH - Filippine 19
CL - Cile 16
JO - Giordania 16
AU - Australia 15
EG - Egitto 15
BE - Belgio 14
CZ - Repubblica Ceca 14
DZ - Algeria 14
NP - Nepal 14
AZ - Azerbaigian 13
KR - Corea 13
OM - Oman 12
PE - Perù 12
PY - Paraguay 12
UY - Uruguay 12
BO - Bolivia 11
KE - Kenya 11
CH - Svizzera 10
GT - Guatemala 10
NI - Nicaragua 8
SV - El Salvador 8
AL - Albania 7
EE - Estonia 7
IE - Irlanda 7
IL - Israele 7
TT - Trinidad e Tobago 7
ET - Etiopia 6
HN - Honduras 6
KZ - Kazakistan 5
LB - Libano 5
NZ - Nuova Zelanda 5
RO - Romania 5
RS - Serbia 5
TH - Thailandia 5
A2 - ???statistics.table.value.countryCode.A2??? 4
BB - Barbados 4
BG - Bulgaria 4
HR - Croazia 4
PT - Portogallo 4
CI - Costa d'Avorio 3
CY - Cipro 3
DK - Danimarca 3
EU - Europa 3
GR - Grecia 3
LY - Libia 3
PA - Panama 3
SN - Senegal 3
BA - Bosnia-Erzegovina 2
CW - ???statistics.table.value.countryCode.CW??? 2
GE - Georgia 2
KG - Kirghizistan 2
KH - Cambogia 2
LV - Lettonia 2
MD - Moldavia 2
MM - Myanmar 2
MN - Mongolia 2
PS - Palestinian Territory 2
QA - Qatar 2
Totale 32.298
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Città #
Ashburn 2.281
Fairfield 1.850
Singapore 1.781
Woodbridge 1.572
Houston 1.073
San Jose 1.009
Hong Kong 799
Jacksonville 793
Ann Arbor 691
Seattle 689
Council Bluffs 622
Cambridge 617
Wilmington 602
Santa Clara 579
Beijing 563
Ferrara 548
Chandler 532
Dallas 374
Nanjing 279
Warsaw 256
Izmir 255
Ho Chi Minh City 248
Tokyo 227
Los Angeles 201
Princeton 201
Hanoi 176
Lauterbourg 172
San Diego 140
Boardman 125
Mexico City 120
São Paulo 117
New York 101
Milan 93
Chicago 86
Shanghai 75
The Dalles 74
Nanchang 71
Dearborn 66
Hefei 65
Washington 64
Addison 61
Shenyang 61
Toronto 60
San Francisco 58
Bologna 54
London 51
Moscow 51
Tianjin 47
Hebei 46
Haiphong 43
Phoenix 40
Da Nang 39
Mountain View 39
Orem 39
Atlanta 38
Jiaxing 38
Brooklyn 37
Columbus 36
Montreal 36
Stockholm 36
Rio de Janeiro 33
Rome 32
Changsha 30
Jakarta 30
Norwalk 29
Chennai 28
Johannesburg 28
Taipei 28
Frankfurt am Main 27
Kunming 27
Manchester 27
Redwood City 27
Baghdad 26
Falkenstein 26
Belo Horizonte 25
Denver 25
Curitiba 24
Guangzhou 24
Philadelphia 24
Tashkent 24
Zhengzhou 24
Buffalo 23
Helsinki 23
Salt Lake City 23
Amsterdam 22
Boston 22
Des Moines 22
Brasília 21
Caracas 21
Jinan 21
Auburn Hills 20
Charlotte 20
Guayaquil 20
San José 20
Ankara 19
Hải Dương 18
Indiana 18
Istanbul 18
Quito 18
Amman 16
Totale 22.050
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 386
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 318
GaN HEMT Noise Model Based on Electromagnetic Simulations 312
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 295
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 251
A new approach to Class-E power amplifier design 237
A procedure for the extraction of a nonlinear microwave GaN FET model 236
Neural approach for temperature-dependent modeling of GaN HEMTs 234
Evaluation of Uncertainty in Temporal Waveforms of Microwave Transistors 231
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 224
GaN HEMT noise modeling based on 50-Ω noise factor 223
75-VDC GaN technology investigation from a degradation perspective 222
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 220
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 220
A GaN power amplifier for 100 VDC bus in GPS L-band 219
Microwave transistor modeling 216
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 215
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 214
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 213
Extremely low-frequency measurements using an active bias tee 213
Measurement Uncertainty Propagation in Transistor Model Parameters via Polynomial Chaos Expansion 213
X-Band GaN Power Amplifier for Future Generation SAR Systems 211
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 211
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 209
Kink Effect in S22 for GaN and GaAs HEMTs 208
A distributed approach for millimetre-wave electron device modelling 207
A Nonquasi-Static Empirical Model of Electron Devices 205
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 204
Behavioral Modeling of GaN FETs: a Load-Line Approach 204
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 203
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 203
"Hybrid" Approach to microwave power amplifier design 202
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 201
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 200
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 200
Linear versus nonlinear de-embedding: Experimental investigation 200
Waveform engineering: State-of-the-art and future trends (invited paper) 200
Figure di Merito e Metodologia di Confronto per Modelli Non Lineari di Dispositivi Elettronici a Microonde 199
Evaluation of FET performance and restrictions by low-frequency measurements 199
On the evaluation of the high-frequency load line in active devices 198
Thermal characterization of high-power GaN HEMTs up to 65 GHz 197
Automated Microwave Device Characterization Set-up Based on a Technology-Independent Generalized Bias System 196
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 196
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 195
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 194
GaN Ku-band low-noise amplifier design including RF life test 193
Comparison of Electron Device Models Based on Operation-specific Metrics 191
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 191
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 190
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 190
An ultra-wideband sensing board for IoT 189
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 188
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 187
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 187
Microwave FET model identification based on vector intermodulation measurements 186
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 186
Temperature Influence on GaN HEMT Equivalent Circuit 186
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 185
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 183
GaN HEMT model extraction based on dynamic-bias measurements 183
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 181
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 181
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 181
Waveforms-Based Large-Signal Identification of Transistor Models 180
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 179
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 179
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 176
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 176
Nonlinear Deembedding of Microwave Large-Signal Measurements 176
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 175
Temperature dependent vector large-signal measurements 175
GaN power amplifier design exploiting wideband large-signal matching 175
Nonlinear modeling of InP devices for W-band applications 175
Scalable nonlinear FET model based on a distributed parasitic network description 174
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 174
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 174
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 172
Nonlinear model for 40-GHz cold-FET operation 172
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 172
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 171
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 171
Microwave Wireless Communications: From Transistor to System Level 170
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements 170
On the use of the discrete-time convolution model for the compensation of non-idealities within digital acquisition channels 168
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 168
Workshops and short courses 168
EM-based Modeling of Cascode FETs Suitable for MMIC Design 167
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 167
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 165
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation 164
Accurate EM-Based Modeling of Cascode FETs 164
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 162
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 162
An Innovative Two-Source Large-Signal Measurement System for the Characterization of Low-Frequency Dispersive Effects in FETs 160
Improvement of PHEMT Intermodulation Prediction Through the Accurate Modelling of Low-Frequency Dispersion Effects 159
Investigation on the Thermal Behavior of Microwave GaN HEMTs 159
Extended operation of class-F power amplifiers using input waveform engineering 159
Waveforms-Only Based Nonlinear De-Embedding in Active Devices 159
Automated Microwave Device Characterization Set-up Based on a Technology-independent Generalized Bias System 158
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 158
Totale 19.565
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Categoria #
all - tutte 156.383
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.032
Totale 158.415
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.378 0 0 0 24 86 95 95 82 74 152 236 534
2022/20231.507 190 10 35 133 238 276 70 142 255 13 98 47
2023/20241.080 95 146 82 40 127 189 56 48 15 28 38 216
2024/20253.544 89 94 313 40 537 56 117 350 505 530 633 280
2025/202610.318 826 586 1.149 1.234 1.448 602 1.090 513 1.105 1.252 319 194
2026/20272.693 328 663 942 760 0 0 0 0 0 0 0 0
Totale 32.711