An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency
Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects
RAFFO, Antonio;VANNINI, Giorgio;
2009
Abstract
An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequencyFile in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
