SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

VANNINI, Giorgio
 Distribuzione geografica
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Continente #
NA - Nord America 19.121
AS - Asia 8.205
EU - Europa 4.561
SA - Sud America 1.751
AF - Africa 129
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 5
Totale 33.784
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Nazione #
US - Stati Uniti d'America 18.813
SG - Singapore 3.379
CN - Cina 2.276
BR - Brasile 1.495
UA - Ucraina 1.161
HK - Hong Kong 989
IT - Italia 941
TR - Turchia 695
DE - Germania 636
GB - Regno Unito 503
VN - Vietnam 420
SE - Svezia 322
FI - Finlandia 267
RU - Federazione Russa 262
PL - Polonia 236
MX - Messico 171
CA - Canada 102
AR - Argentina 98
BD - Bangladesh 70
ID - Indonesia 64
IN - India 64
ZA - Sudafrica 58
EC - Ecuador 51
FR - Francia 46
IQ - Iraq 43
JP - Giappone 37
NL - Olanda 34
ES - Italia 31
CO - Colombia 29
LT - Lituania 26
UZ - Uzbekistan 25
VE - Venezuela 23
AT - Austria 18
CL - Cile 16
JO - Giordania 16
MA - Marocco 16
PK - Pakistan 16
CZ - Repubblica Ceca 14
AE - Emirati Arabi Uniti 13
BE - Belgio 13
OM - Oman 13
TW - Taiwan 13
KE - Kenya 12
PY - Paraguay 12
UY - Uruguay 12
AU - Australia 11
EG - Egitto 11
AZ - Azerbaigian 10
KR - Corea 10
PE - Perù 10
CH - Svizzera 9
DZ - Algeria 9
TN - Tunisia 9
SA - Arabia Saudita 8
JM - Giamaica 7
DO - Repubblica Dominicana 6
KZ - Kazakistan 6
RO - Romania 6
BG - Bulgaria 5
HN - Honduras 5
IL - Israele 5
MY - Malesia 5
NP - Nepal 5
SI - Slovenia 5
BO - Bolivia 4
CR - Costa Rica 4
ET - Etiopia 4
KG - Kirghizistan 4
LB - Libano 4
MD - Moldavia 4
SN - Senegal 4
A2 - ???statistics.table.value.countryCode.A2??? 3
AL - Albania 3
PA - Panama 3
PT - Portogallo 3
CI - Costa d'Avorio 2
CY - Cipro 2
DK - Danimarca 2
EU - Europa 2
GE - Georgia 2
GT - Guatemala 2
HR - Croazia 2
IE - Irlanda 2
LV - Lettonia 2
PH - Filippine 2
PS - Palestinian Territory 2
QA - Qatar 2
RS - Serbia 2
TT - Trinidad e Tobago 2
AM - Armenia 1
AO - Angola 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
DM - Dominica 1
GA - Gabon 1
GR - Grecia 1
KH - Cambogia 1
LK - Sri Lanka 1
Totale 33.772
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Città #
Fairfield 2.310
Woodbridge 2.260
Singapore 1.878
Ashburn 1.652
Houston 1.546
Jacksonville 1.291
Hong Kong 983
Ann Arbor 918
Chandler 889
Seattle 866
Wilmington 792
Cambridge 770
Santa Clara 626
Beijing 603
Ferrara 503
Nanjing 454
Dallas 425
Izmir 424
Princeton 291
Warsaw 235
Boardman 211
Los Angeles 193
San Diego 183
Mexico City 132
Ho Chi Minh City 131
São Paulo 122
Nanchang 118
Shenyang 98
Hanoi 95
Milan 93
Tianjin 91
Hebei 84
Shanghai 84
Dearborn 83
Hefei 83
Moscow 78
Chicago 74
Jiaxing 67
Addison 66
New York 60
The Dalles 55
Changsha 53
London 52
Washington 50
Mountain View 45
Bologna 43
Norwalk 42
Jinan 41
Rio de Janeiro 41
San Francisco 38
Kunming 37
Stockholm 37
Toronto 37
Brooklyn 35
Columbus 33
Dong Ket 33
Redwood City 32
Belo Horizonte 31
Council Bluffs 30
Montreal 30
Tokyo 30
Zhengzhou 30
Curitiba 28
Johannesburg 28
Ningbo 28
Falkenstein 27
San Mateo 27
Brasília 26
Des Moines 26
Chennai 25
Denver 25
Jakarta 25
Manchester 25
Guangzhou 24
Orem 24
Atlanta 23
Auburn Hills 23
Düsseldorf 23
Falls Church 22
Salt Lake City 22
Amsterdam 21
Haiphong 21
Ankara 20
Boston 20
Campinas 20
Porto Alegre 20
Ribeirão Preto 20
Tashkent 20
Quito 19
Indiana 18
Manaus 17
Munich 17
Orange 17
Verona 17
Amman 16
Guayaquil 16
Lanzhou 16
Phoenix 16
Rome 16
Settimo Milanese 16
Totale 23.531
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 336
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 256
10 Watt High Efficiency GaAs MMIC Power Amplifier for Space Applications 239
GaN HEMT Noise Model Based on Electromagnetic Simulations 233
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 229
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 202
Neural approach for temperature-dependent modeling of GaN HEMTs 195
A procedure for the extraction of a nonlinear microwave GaN FET model 186
A finite-memory nonlinear model for microwave electron devices 186
Extremely low-frequency measurements using an active bias tee 185
A computationally efficient approach for the design of RF power amplifiers 182
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 181
GaN HEMT noise modeling based on 50-Ω noise factor 180
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 178
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 177
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 177
Microwave transistor modeling 176
A new approach to Class-E power amplifier design 175
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 175
A 110 GHz scalable FET model based on 50 GHz S-parameter measurements 173
A Harmonic-Balance-oriented modeling approach for microwave electron devices 172
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 171
Behavioral Modeling of GaN FETs: a Load-Line Approach 171
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 171
X-Band GaN Power Amplifier for Future Generation SAR Systems 171
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 171
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 170
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 169
A GaN power amplifier for 100 VDC bus in GPS L-band 169
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 168
Linear versus nonlinear de-embedding: Experimental investigation 167
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 166
Evaluation of FET performance and restrictions by low-frequency measurements 166
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 164
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 164
75-VDC GaN technology investigation from a degradation perspective 163
"Hybrid" Approach to microwave power amplifier design 162
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 162
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 162
On the evaluation of the high-frequency load line in active devices 161
Waveform engineering: State-of-the-art and future trends (invited paper) 161
GaN HEMT model extraction based on dynamic-bias measurements 161
A Nonquasi-Static Empirical Model of Electron Devices 160
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 160
Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs 160
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 160
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 160
A distributed approach for millimetre-wave electron device modelling 159
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 159
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 158
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 156
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 155
Waveforms-Based Large-Signal Identification of Transistor Models 155
Mathematical approaches to electron device modelling for non-linear microwave circuit design: state of the art and present trends 153
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 153
Microwave large-signal amplifier design using a quasi-black-box transistor model 153
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 153
GaN Ku-band low-noise amplifier design including RF life test 153
An ultra-wideband sensing board for IoT 152
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 152
Power amplifier ACPR simulation using standard Harmonic balance tools 151
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 151
Thermal characterization of high-power GaN HEMTs up to 65 GHz 151
Temperature Influence on GaN HEMT Equivalent Circuit 150
Design of Low Phase Noise Dielectric Resonator Oscillators with GaInP HBT devices exploiting a Non-Linear Noise Model 149
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 149
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 148
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 147
A New Technique for Thermal Resistance Measurement in Power Electron Devices 147
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 147
Nonlinear Deembedding of Microwave Large-Signal Measurements 147
Scalable nonlinear FET model based on a distributed parasitic network description 146
A Preliminary Study of Different Metrics for the Validation of Device and Behavioral Models 146
Comparison of Electron Device Models Based on Operation-specific Metrics 146
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 146
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 145
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 145
A design method for parallel feed-back dielectric resonator oscillators 145
Kink Effect in S22 for GaN and GaAs HEMTs 145
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 145
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 145
Electron Device Model Parameter Identification Through Large-Signal-Predictive Small-Signal-Based Error Functions 144
Modeling the effects of traps on the IV-characteristics of GaAs MESFETs 144
Nonlinear modeling of InP devices for W-band applications 144
EM-based Modeling of Cascode FETs Suitable for MMIC Design 143
Microwave FET model identification based on vector intermodulation measurements 143
Modeling of non ideal dynamic characteristics in S/H-ADC devices 143
Accurate prediction of intermodulation distortion in GaAs MESFETs 142
Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model 142
GaN power amplifier design exploiting wideband large-signal matching 142
A CAD tool for the small-signal stability analysis of MMIC power amplifiers 142
Optimization of the solenoid valve behavior in common-rail injection systems 142
Nonlinear model for 40-GHz cold-FET operation 141
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 141
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 140
A 48Watt and 60dB Gain Hybrid Power Line-Up Using a 0.35um GaAs pHEMT Process for an L-Band T/R Module of a space SAR Antenna 139
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 139
Accurate EM-Based Modeling of Cascode FETs 139
Nonlinear integral modeling of Dual-Gate GaAs MESFETs 137
Temperature dependent vector large-signal measurements 136
Totale 16.268
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Categoria #
all - tutte 163.424
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.762
Totale 165.186
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.081 0 0 0 0 0 386 146 419 68 531 335 196
2021/20222.553 97 312 185 28 117 106 114 125 97 209 357 806
2022/20232.315 296 9 39 220 388 434 82 229 371 20 152 75
2023/20241.344 127 206 94 50 130 203 61 79 19 30 41 304
2024/20254.348 103 98 401 44 681 64 152 449 635 674 715 332
2025/20267.361 1.004 814 1.483 1.777 1.821 462 0 0 0 0 0 0
Totale 34.136