SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

VANNINI, Giorgio
 Distribuzione geografica
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Continente #
NA - Nord America 22.608
AS - Asia 10.999
EU - Europa 5.147
SA - Sud America 2.071
Continente sconosciuto - Info sul continente non disponibili 360
AF - Africa 231
OC - Oceania 18
Totale 41.434
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Nazione #
US - Stati Uniti d'America 22.160
SG - Singapore 4.111
CN - Cina 2.741
BR - Brasile 1.632
UA - Ucraina 1.168
HK - Hong Kong 1.102
VN - Vietnam 1.087
IT - Italia 1.081
TR - Turchia 734
DE - Germania 670
GB - Regno Unito 530
SE - Svezia 324
FR - Francia 316
JP - Giappone 309
FI - Finlandia 288
RU - Federazione Russa 272
PL - Polonia 245
MX - Messico 201
IN - India 186
BD - Bangladesh 163
CA - Canada 152
AR - Argentina 147
ID - Indonesia 101
IQ - Iraq 82
EC - Ecuador 74
ZA - Sudafrica 73
CO - Colombia 65
VE - Venezuela 64
PK - Pakistan 54
UZ - Uzbekistan 44
ES - Italia 43
NL - Olanda 43
MA - Marocco 36
MY - Malesia 32
TN - Tunisia 31
PH - Filippine 28
SA - Arabia Saudita 28
CL - Cile 27
LT - Lituania 27
AE - Emirati Arabi Uniti 26
AT - Austria 23
CR - Costa Rica 23
JO - Giordania 23
KE - Kenya 22
TW - Taiwan 20
IE - Irlanda 19
JM - Giamaica 19
OM - Oman 19
EG - Egitto 18
NP - Nepal 18
UY - Uruguay 17
AZ - Azerbaigian 16
BE - Belgio 16
CZ - Repubblica Ceca 16
DZ - Algeria 15
PY - Paraguay 15
AU - Australia 14
BO - Bolivia 14
PE - Perù 14
KR - Corea 12
KZ - Kazakistan 11
CH - Svizzera 10
GT - Guatemala 9
IL - Israele 9
ET - Etiopia 8
HN - Honduras 8
LY - Libia 7
AL - Albania 6
DO - Repubblica Dominicana 6
LB - Libano 6
RO - Romania 6
RS - Serbia 6
SI - Slovenia 6
SV - El Salvador 6
BG - Bulgaria 5
GE - Georgia 5
PT - Portogallo 5
TT - Trinidad e Tobago 5
BB - Barbados 4
DK - Danimarca 4
KG - Kirghizistan 4
MD - Moldavia 4
NZ - Nuova Zelanda 4
PS - Palestinian Territory 4
SN - Senegal 4
A2 - ???statistics.table.value.countryCode.A2??? 3
CI - Costa d'Avorio 3
CY - Cipro 3
HR - Croazia 3
LV - Lettonia 3
MM - Myanmar 3
NI - Nicaragua 3
PA - Panama 3
QA - Qatar 3
TH - Thailandia 3
AO - Angola 2
BA - Bosnia-Erzegovina 2
BH - Bahrain 2
EU - Europa 2
GR - Grecia 2
Totale 41.042
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Città #
Singapore 2.433
Fairfield 2.310
Woodbridge 2.260
Ashburn 2.248
Houston 1.554
Jacksonville 1.292
San Jose 1.178
Hong Kong 1.085
Ann Arbor 918
Chandler 889
Seattle 870
Wilmington 792
Cambridge 770
Santa Clara 733
Beijing 705
Council Bluffs 634
Ferrara 506
Nanjing 454
Dallas 450
Izmir 425
Ho Chi Minh City 337
Tokyo 300
Princeton 292
Hanoi 263
Warsaw 239
Lauterbourg 237
Los Angeles 232
Boardman 211
San Diego 191
Mexico City 150
São Paulo 135
Nanchang 118
Milan 111
New York 103
Shenyang 98
Chicago 94
Tianjin 92
Shanghai 89
Dearborn 84
Hebei 84
Hefei 83
Moscow 78
The Dalles 76
Jiaxing 67
Addison 66
Washington 62
Changsha 56
London 56
Da Nang 55
Toronto 55
San Francisco 53
Haiphong 52
Bologna 49
Mountain View 45
Norwalk 45
Orem 45
Rio de Janeiro 45
Jinan 41
Brooklyn 40
Stockholm 39
Kunming 37
Columbus 36
Tashkent 36
Chennai 35
Helsinki 35
Montreal 34
Dong Ket 33
Manchester 33
Belo Horizonte 32
Johannesburg 32
Redwood City 32
Zhengzhou 32
Denver 31
Baghdad 30
Curitiba 30
Jakarta 30
Quito 29
Atlanta 28
Brasília 28
Ningbo 28
Phoenix 28
San Mateo 28
Des Moines 27
Falkenstein 27
Frankfurt am Main 27
Guangzhou 27
Salt Lake City 27
Rome 26
Amsterdam 24
Ankara 24
Auburn Hills 23
Caracas 23
Düsseldorf 23
Guayaquil 23
Amman 22
Charlotte 22
Falls Church 22
Philadelphia 22
Campinas 21
Porto Alegre 21
Totale 28.202
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Nome #
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors 376
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification 306
GaN HEMT Noise Model Based on Electromagnetic Simulations 299
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 283
10 Watt High Efficiency GaAs MMIC Power Amplifier for Space Applications 276
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique 239
A new approach to Class-E power amplifier design 228
Neural approach for temperature-dependent modeling of GaN HEMTs 225
A procedure for the extraction of a nonlinear microwave GaN FET model 224
Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs 215
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 215
A dual-source nonlinear measurement system oriented to the empirical characterization of low-frequency dispersion in microwave electron devices 215
A GaN power amplifier for 100 VDC bus in GPS L-band 214
A computationally efficient approach for the design of RF power amplifiers 213
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 213
GaN HEMT noise modeling based on 50-Ω noise factor 212
Microwave transistor modeling 212
75-VDC GaN technology investigation from a degradation perspective 211
A New Empirical Model for the Characterization of Low-Frequency Dispersive Effects in FET Electron Devices Accounting for Thermal Influence on the Trapping State 210
A 110 GHz scalable FET model based on 50 GHz S-parameter measurements 209
Extremely low-frequency measurements using an active bias tee 207
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 205
A CLEAR-CUT UNDERSTANDING OF THE CURRENT-GAIN PEAK IN HEMTs: THEORY AND EXPERIMENTS 203
X-Band GaN Power Amplifier for Future Generation SAR Systems 203
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 202
A distributed approach for millimetre-wave electron device modelling 201
Behavioral Modeling of GaN FETs: a Load-Line Approach 200
Breakdown Walkout Investigation in Electron Devices Under Nonlinear Dynamic Regime 199
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 199
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 199
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 199
A finite-memory nonlinear model for microwave electron devices 199
Linear versus nonlinear de-embedding: Experimental investigation 197
A Nonquasi-Static Empirical Model of Electron Devices 196
Nonlinear embedding and de-embedding techniques for large-signal fet measurements 196
Evaluation of FET performance and restrictions by low-frequency measurements 195
Waveform engineering: State-of-the-art and future trends (invited paper) 195
Kink Effect in S22 for GaN and GaAs HEMTs 194
A Harmonic-Balance-oriented modeling approach for microwave electron devices 194
Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design 193
On the evaluation of the high-frequency load line in active devices 192
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 192
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 190
"Hybrid" Approach to microwave power amplifier design 190
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs 190
Thermal characterization of high-power GaN HEMTs up to 65 GHz 189
A CAD tool for the small-signal stability analysis of MMIC power amplifiers 187
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology 186
A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load-line 186
Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique 185
GaN Ku-band low-noise amplifier design including RF life test 185
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 183
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 183
Modelling insight into the resonance frequencies of the microwave impedance parameters for GaAs HEMTs 182
Extraction of an Extrinsic Parasitic Network for Accurate mm-Wave FET Scalable Modeling on the Basis of Full-Wave EM Simulation 182
Microwave FET model identification based on vector intermodulation measurements 181
An ultra-wideband sensing board for IoT 181
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 181
Comparison of Electron Device Models Based on Operation-specific Metrics 180
Temperature Influence on GaN HEMT Equivalent Circuit 180
GaN HEMT model extraction based on dynamic-bias measurements 180
In-Deep Insight into the Extrinsic Capacitance Impact on GaN HEMT Modeling at Millimeter-Wave Band 178
Microwave large-signal amplifier design using a quasi-black-box transistor model 178
Mathematical approaches to electron device modelling for non-linear microwave circuit design: state of the art and present trends 177
Nonquasi-Static Large-Signal Model of GaN FETs through an Equivalent Voltage Approach 177
An Automated Measurement System for the Characterization of Electron Device Degradation under Nonlinear Dynamic Regime 177
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 177
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 177
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 176
A 48Watt and 60dB Gain Hybrid Power Line-Up Using a 0.35um GaAs pHEMT Process for an L-Band T/R Module of a space SAR Antenna 174
A design method for parallel feed-back dielectric resonator oscillators 173
Design of Low Phase Noise Dielectric Resonator Oscillators with GaInP HBT devices exploiting a Non-Linear Noise Model 172
Waveforms-Based Large-Signal Identification of Transistor Models 172
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 172
Scalable nonlinear FET model based on a distributed parasitic network description 171
Power amplifier ACPR simulation using standard Harmonic balance tools 171
A Preliminary Study of Different Metrics for the Validation of Device and Behavioral Models 171
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 171
Nonlinear modeling of InP devices for W-band applications 170
Empirical Investigation on Time Dispersion of Microwave Electron Device Characteristics under Nonlinear Dynamic Operating Conditions 170
Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design 170
A New Millimeter Wave Small-Signal Modeling Approach for pHEMTs Accounting for the Output Conductance Time Delay 169
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 169
Modeling the effects of traps on the IV-characteristics of GaAs MESFETs 168
Temperature dependent vector large-signal measurements 168
A Small-Signal Parameter-Based Metric for Nonlinear Models of Electron Devices 168
Optimization of the solenoid valve behavior in common-rail injection systems 168
Nonlinear Deembedding of Microwave Large-Signal Measurements 168
Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup 166
A New Technique for Thermal Resistance Measurement in Power Electron Devices 166
EM-based Modeling of Cascode FETs Suitable for MMIC Design 166
GaN power amplifier design exploiting wideband large-signal matching 165
Nonlinear model for 40-GHz cold-FET operation 165
Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects 164
Modeling of non ideal dynamic characteristics in S/H-ADC devices 163
Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM-Analyses 162
Small-Signal Operation-Based Simplified Verification of Non-Linear Models for Millimeter-Wave Electron Devices 160
Accurate prediction of intermodulation distortion in GaAs MESFETs 160
On-Wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices 160
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 159
Totale 19.264
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Categoria #
all - tutte 195.801
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.120
Totale 197.921
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.144 0 0 185 28 117 106 114 125 97 209 357 806
2022/20232.315 296 9 39 220 388 434 82 229 371 20 152 75
2023/20241.344 127 206 94 50 130 203 61 79 19 30 41 304
2024/20254.348 103 98 401 44 681 64 152 449 635 674 715 332
2025/202613.023 1.004 814 1.483 1.777 1.821 770 1.294 640 1.375 1.545 338 162
2026/20271.636 391 807 438 0 0 0 0 0 0 0 0 0
Totale 41.434