A teclinology-independent, mathematical approach is proposed for the look-up-table based nonlinear modeling of electron devices. The model allows for accurate large-signal performance prediction at high operating frequencies, even in the presence of important parasitic and low-frequency dispersive effects. All the nonlinear functions which characterise this black-box model are directly related to conventional measurements which can be carried out with automatic instrumentation. Preliminary experimental results are presented which confirm the validity of the approach. © 1997 IEEE.
A finite-memory nonlinear model for microwave electron devices
VANNINI, Giorgio;
1997
Abstract
A teclinology-independent, mathematical approach is proposed for the look-up-table based nonlinear modeling of electron devices. The model allows for accurate large-signal performance prediction at high operating frequencies, even in the presence of important parasitic and low-frequency dispersive effects. All the nonlinear functions which characterise this black-box model are directly related to conventional measurements which can be carried out with automatic instrumentation. Preliminary experimental results are presented which confirm the validity of the approach. © 1997 IEEE.File in questo prodotto:
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