This work presents an improved theoretical analysis of the physical mechanisms leading to charge loss from the floating gate of electrically erasable PROMs (E2PROMs). The analysis is applied to a simplified model of a FLOTOX cell in order to evaluate data retention characteristics using the applied field as an accelerating factor. A set of experimental results (obtained on virgin as well as on aged cells) is presented and degradation of data retention due to cell aging is examined. Copyright © 1991 John Wiley & Sons, Ltd.
Evaluation of E2PROM Data Retention by Field Acceleration
OLIVO, Piero;
1991
Abstract
This work presents an improved theoretical analysis of the physical mechanisms leading to charge loss from the floating gate of electrically erasable PROMs (E2PROMs). The analysis is applied to a simplified model of a FLOTOX cell in order to evaluate data retention characteristics using the applied field as an accelerating factor. A set of experimental results (obtained on virgin as well as on aged cells) is presented and degradation of data retention due to cell aging is examined. Copyright © 1991 John Wiley & Sons, Ltd.File in questo prodotto:
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