Multiple scattering of positively charged particles moving near the (111) plane in a silicon single crystal

The article is devoted to the study of the suppression of multiple scattering of positively charged particles with momenta of 180 GeV/c and 400 GeV/c passing through bent single crystals of silicon at small angles to the plane (111) both in channeling mode and in the above-barrier state. For the first time, the suppression of the effect of multiple scattering of non-channeling particles passing at a small angle to one of the planes of a silicon single crystal was observed. In addition, the asymmetry was observed in the multiple scattering of over-barrier particles with respect to their zero angle of entry into the single crystal.