Copper sulfide (CuS) thin films were grown on a single crystal Ag(1 1 1) substrate by Electrochemical Atomic Layer Deposition (ECALD) method, i.e., by alternated surface limited deposition of copper and sulfur. A detailed investigation of deposition of Cu on S allowed to find the best conditions for copper deposition. The electrochemical characterization of deposits obtained with different deposition cycles suggests a 1:1 stoichiometric ratio between Cu and S corresponding to Cu monosulfide. The compositional analysis was performed by X-rays Photoelectron Spectroscopy (XPS), and the morphological was investigated by Atomic Force Microscopy (AFM) for deposits formed with 20 ECALD cycles.
Electrochemical layer by layer growth and characterization of copper sulfur thin films on Ag(1 1 1)
F. Di Benedetto;
2011
Abstract
Copper sulfide (CuS) thin films were grown on a single crystal Ag(1 1 1) substrate by Electrochemical Atomic Layer Deposition (ECALD) method, i.e., by alternated surface limited deposition of copper and sulfur. A detailed investigation of deposition of Cu on S allowed to find the best conditions for copper deposition. The electrochemical characterization of deposits obtained with different deposition cycles suggests a 1:1 stoichiometric ratio between Cu and S corresponding to Cu monosulfide. The compositional analysis was performed by X-rays Photoelectron Spectroscopy (XPS), and the morphological was investigated by Atomic Force Microscopy (AFM) for deposits formed with 20 ECALD cycles.I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
