We have observed a set of broad luminescence bands between 1.07 and 0.85 eV, in He-implanted Si annealed in vacuum. These emissions are very similar to those of H-implanted and annealed Si, demonstrated by different groups in last years, in which H was believed to play a fundamental role. A comparison between the photoluminescence of He-implanted Si and of H-implanted Si, has allowed to conclude that the infrared photoluminescence of the Si:H system does not depend on H presence, but must be completely ascribed to the damage produced by the bombardment of Si with light ions. (C) 1997 Published by Elsevier Science Ltd. All rights reserved.
Infrared light emission due to radiation damage in crystalline silicon
BISERO, Diego;
1997
Abstract
We have observed a set of broad luminescence bands between 1.07 and 0.85 eV, in He-implanted Si annealed in vacuum. These emissions are very similar to those of H-implanted and annealed Si, demonstrated by different groups in last years, in which H was believed to play a fundamental role. A comparison between the photoluminescence of He-implanted Si and of H-implanted Si, has allowed to conclude that the infrared photoluminescence of the Si:H system does not depend on H presence, but must be completely ascribed to the damage produced by the bombardment of Si with light ions. (C) 1997 Published by Elsevier Science Ltd. All rights reserved.I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
