X-ray-diffraction Study of P-doped Polycrystalline Si Thin-films Used In Ulsi Devices

A systematic study concerning texture of P-doped polycrystalline Si thin films has been performed. The as-deposited films display a (220) texture that has been shown to decrease with both annealing and P-doping whereas the (111) and (311) textures increase. Some samples have undergone oxidation. The effects on the texture of the oxidation process have been found to be not distinguishable from those of annealing. A quantitative approach has been followed in order to take into account the film thickness effect on the intensities of the X-ray diffraction peaks, often neglected in qualitative analyses. Such an approach showed that the generally ignored (311) texture is very important, especially for the low doped samples.