Identification technique of FET model based on vector nonlinear measurements

A new modelling approach which exploits only vector nonlinear measurements is described. The parameters of the I-V and Q-V nonlinear constitutive functions are identified by combining low- and high-frequency large-signal measurements with a numerical optimisation routine. Low-frequency dispersion manifesting in the I-V characteristics is also correctly accounted for. As a case study a gallium nitride HEMT on silicon carbide substrate is considered and very good agreement between measurements and simulation is achieved.