We show that a semiconductor nanocavity where the dominant nonlinear mechanism is the refractive index change induced by carriers generated through two-photon absorption can become unstable, exhibiting the onset of spontaneous oscillations (self-pulsing). The linear stability analysis, validated through numerical integration of a mean-field model, leads us to predict oscillations to take place typically in the 10-ps range at input power levels of the order of 15 mW.

Self-pulsing driven by two-photon absorption in semiconductor nanocavities

MALAGUTI, Stefania;BELLANCA, Gaetano;TRILLO, Stefano
2011

Abstract

We show that a semiconductor nanocavity where the dominant nonlinear mechanism is the refractive index change induced by carriers generated through two-photon absorption can become unstable, exhibiting the onset of spontaneous oscillations (self-pulsing). The linear stability analysis, validated through numerical integration of a mean-field model, leads us to predict oscillations to take place typically in the 10-ps range at input power levels of the order of 15 mW.
2011
Malaguti, Stefania; Bellanca, Gaetano; A., de Rossi; S., Combrié; Trillo, Stefano
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1523519
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