A new approach is proposed which takes into account both traps and thermal phenomena for the modelling of deviations between static and dynamic drain current characteristics in III-V field effect transistors. The model is based on the well-known ‘backgating’ concept and can easily be identified on the basis of conventional static drain current characteristics and small-signal, low-frequency S parameters. Experimental results confirm the accuracy of the proposed model.
Backgating model including self-heating for low-frequency dispersive effect in III-V FETs
VANNINI G.Penultimo
;
1998
Abstract
A new approach is proposed which takes into account both traps and thermal phenomena for the modelling of deviations between static and dynamic drain current characteristics in III-V field effect transistors. The model is based on the well-known ‘backgating’ concept and can easily be identified on the basis of conventional static drain current characteristics and small-signal, low-frequency S parameters. Experimental results confirm the accuracy of the proposed model.File in questo prodotto:
File | Dimensione | Formato | |
---|---|---|---|
00722063.pdf
solo gestori archivio
Descrizione: versione editoriale
Tipologia:
Full text (versione editoriale)
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
454.1 kB
Formato
Adobe PDF
|
454.1 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
00722063.pdf
accesso aperto
Descrizione: Full text editoriale
Tipologia:
Full text (versione editoriale)
Licenza:
PUBBLICO - Pubblico con Copyright
Dimensione
454.1 kB
Formato
Adobe PDF
|
454.1 kB | Adobe PDF | Visualizza/Apri |
I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.