Diamond is an interesting candidate for ultraviolet light-emitting devices. Device fabrication properly doped thin films of diamond. The valence and conduction band electronic of boron-doped diamond (BDD) has been measured using soft x-ray emission (XES) and x-ray absorption spectroscopy (XAS). Local density approximation of the electronic structure were also performed, and are in general agreement with XES and XAS data. However, XAS reveals the existence of three doped states in the band , only one of which is predicted by theory. Further improvements in terms of chemical and inertness can be obtained by modifying the surface by insertion of fluorine. The of XES and XAS measurements of BDD and fluorinated BDD will be presented.
The electronic structure of boron doped diamond probed with XAS and XES
FERRO, Sergio;DE BATTISTI, Achille
2005
Abstract
Diamond is an interesting candidate for ultraviolet light-emitting devices. Device fabrication properly doped thin films of diamond. The valence and conduction band electronic of boron-doped diamond (BDD) has been measured using soft x-ray emission (XES) and x-ray absorption spectroscopy (XAS). Local density approximation of the electronic structure were also performed, and are in general agreement with XES and XAS data. However, XAS reveals the existence of three doped states in the band , only one of which is predicted by theory. Further improvements in terms of chemical and inertness can be obtained by modifying the surface by insertion of fluorine. The of XES and XAS measurements of BDD and fluorinated BDD will be presented.I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
