Among the emerging technologies, Resistive RAM (RRAM) devices are considered a promising candidate for the replacement of Static RAM (SRAM) cells as memory elements in the interconnection fabric of Field Programmable Gate Arrays (FPGAs). Although previous works have investigated their advantages in terms of performance and energy efficiency, these assessments have focused on fresh devices. In this work, the aging degradation on the propagation delay caused by negative bias-temperature instability (NBTI) effects on different-sized multiplexers (MUXs) is studied under various Process-Voltage-Temperature (PVT) conditions. The comparison between the full-CMOS and the RRAM-based implementations reveals that the traditional SRAM-based design is more affected by aging due to the higher number of transistors.
Exploring the NBTI Aging and PVT effects on RRAM-based FPGA Multiplexers Performance
Rizzi T.;Bertozzi D.;Zambelli C.
2023
Abstract
Among the emerging technologies, Resistive RAM (RRAM) devices are considered a promising candidate for the replacement of Static RAM (SRAM) cells as memory elements in the interconnection fabric of Field Programmable Gate Arrays (FPGAs). Although previous works have investigated their advantages in terms of performance and energy efficiency, these assessments have focused on fresh devices. In this work, the aging degradation on the propagation delay caused by negative bias-temperature instability (NBTI) effects on different-sized multiplexers (MUXs) is studied under various Process-Voltage-Temperature (PVT) conditions. The comparison between the full-CMOS and the RRAM-based implementations reveals that the traditional SRAM-based design is more affected by aging due to the higher number of transistors.I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
