A mathematical approach, which has been recently proposed for the nonlinear modelling of microwave transistors, is adopted for the large-signal performance prediction of Dual-Gate GaAs MESFETs in the framework of Harmonic-Balance circuit analysis. Unlike classical equivalent circuits, the nonlinear model adopted here can be directly identifled on the bases of DC characteristics and small-signal biasdependent AC parameters without need for optimisation-based procedures for parameter extraction. The validity of the large-signal modelling approach is confirmed by accurate physics-based numerical simulations of a Dual-Gate GaAs MESFET mixer.
Large-signal modelling of Dual-Gate GaAs MESFETs
VANNINI, Giorgio;
1993
Abstract
A mathematical approach, which has been recently proposed for the nonlinear modelling of microwave transistors, is adopted for the large-signal performance prediction of Dual-Gate GaAs MESFETs in the framework of Harmonic-Balance circuit analysis. Unlike classical equivalent circuits, the nonlinear model adopted here can be directly identifled on the bases of DC characteristics and small-signal biasdependent AC parameters without need for optimisation-based procedures for parameter extraction. The validity of the large-signal modelling approach is confirmed by accurate physics-based numerical simulations of a Dual-Gate GaAs MESFET mixer.I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
