This work presents an experimental study of the low-frequency dispersion which impairs the performance of microwave active solid state devices. By exploiting low-frequency large-signal excitations (<; 10 MHz), the dynamic behaviour of the drain-source current generator is highlighted as function of the operating bias condition and frequency. In order to assess the capability of the proposed investigation technique, several experiments have been carried out on a silicon FinFET, a gallium arsenide pHEMT and a gallium nitride HEMT.
Bias and Frequency Dispersion of Dynamic I-V Characteristics in Microwave Transistors
RAFFO, Antonio;VANNINI, Giorgio;
2011
Abstract
This work presents an experimental study of the low-frequency dispersion which impairs the performance of microwave active solid state devices. By exploiting low-frequency large-signal excitations (<; 10 MHz), the dynamic behaviour of the drain-source current generator is highlighted as function of the operating bias condition and frequency. In order to assess the capability of the proposed investigation technique, several experiments have been carried out on a silicon FinFET, a gallium arsenide pHEMT and a gallium nitride HEMT.File in questo prodotto:
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