In this work we present a review of Si/SiGe heterostructures grown by low-energy plasma-enhanced chemical vapor deposition (LEPECVD), a technique which may be used for the manufacturing of electronic devices such as modulation doped FETs (MODFETs), strained-layer SiGe MOSFETs, photodiodes and solar cells.
SiGe heteroepitaxy by low-energy plasma processing
VINCENZI, Donato
2009
Abstract
In this work we present a review of Si/SiGe heterostructures grown by low-energy plasma-enhanced chemical vapor deposition (LEPECVD), a technique which may be used for the manufacturing of electronic devices such as modulation doped FETs (MODFETs), strained-layer SiGe MOSFETs, photodiodes and solar cells.File in questo prodotto:
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