The paper introduces an approach to the modelling of microwave and millimetre-wave FETs based on electromagnetic field theory and semiconductor physics. The described non linear model relates the geometrical, material and process parameters to the device electrical performance. A scalable model derived by the GEC-Marconi F20 process for MESFETs with different gate finger numbers and gate widths has been implemented in a commercial CAD and it has been tested by comparison with large signal measurements.
Multifinger Effect in a GaAs FET Distributed Large Signal CAD Model
VANNINI, Giorgio;
1996
Abstract
The paper introduces an approach to the modelling of microwave and millimetre-wave FETs based on electromagnetic field theory and semiconductor physics. The described non linear model relates the geometrical, material and process parameters to the device electrical performance. A scalable model derived by the GEC-Marconi F20 process for MESFETs with different gate finger numbers and gate widths has been implemented in a commercial CAD and it has been tested by comparison with large signal measurements.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
