In the paper, a previously proposed black-box modelling approach is applied for the large-signal performance prediction of microwave silicon bipolar transistors. Experimental and simulation results confirming the accuracy of the model are provided. Preliminary considerations concerning parasitic deembedding, which can improve the range of validity of the model, are also discussed.
Nonlinear Integral Modelling of Microwave Silicon Bipolar Transistors
VANNINI, Giorgio;
1996
Abstract
In the paper, a previously proposed black-box modelling approach is applied for the large-signal performance prediction of microwave silicon bipolar transistors. Experimental and simulation results confirming the accuracy of the model are provided. Preliminary considerations concerning parasitic deembedding, which can improve the range of validity of the model, are also discussed.File in questo prodotto:
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